Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics

Abstract

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Laser Fluence Dependence of the Electrical Properties of MoO2 Formed by High Repetition Femtosecond Laser Pulses

“…The highest resistivity corresponds to the lowest per pulse laser fluence, while the lowest resistivity corresponds to the highest per pulse laser fluence. These measurements agree well with recently reported highly conductive MoO 2 nanosheets, with conductivity values in the range of 200–475 S cm −1 (resistivity in the order of 2–5 × 10 −3 Ω cm); and resistivity values for MoO 2 thin films in the order of 7 × 10 −4 Ω cm . We must point out that in our case at low per pulse laser fluence a very thin MoO 2 layer, only a few nanometers thick, must form; however, at higher per pulse laser fluences a thicker, several hundreds of nanometers, layer of MoO 2 should form.…”

“…For instance, molybdenum dioxide powder has been obtained by chemical reduction of MoO 3 or through the hydrothermal method. While MoO 2 thin films are usually fabricated by deposition methods like pulsed laser deposition (PLD), pulsed injection‐metal organic chemical vapor deposition, electrodeposition, sputtering and chemical reduction . More demanding forms of MoO 2 like ultrathin nanosheets have been prepared by thermal evaporation in a controlled atmosphere …”

Hydrogenation Dynamics of Electrically Controlled Metal–Insulator Transition in Proton‐Gated Transparent and Flexible WO3 Transistors

“…This phenomenon is expected since no strong chemical bonding can be formed between WO 3 thin film and natural mica, which benefits homogeneous nucleation, a typical characteristic for 2D substrate materials. Similar behaviors are common for other reported van der Waals heteroepitaxy, such as the coexistence of multidomains in VO 2 , MoO 2 thin films deposited on muscovite by molecular beam epitaxy technology 20b,21. It is hard for weak van der Waals interaction to distinguish the nearly structurally identical (200), (020), and (002) plane only with slightly tilt and rotation of WO 6 octahedra (Figure S1, Supporting Information).…”

Van der Waals oxide heteroepitaxy

“…30 Following up, oxide materials were extensively explored. [31][32][33] Currently, most common oxide structures including rocksalt, wurtzite, perovskite, spinel, and antifluorite, were demonstrated in a heterostructure with determined epitaxial relationships as shown in the summary table of Fig. 2.…”

“…Thus, there is no misorientation control of vdW oxide heteroepitaxy, implying an Fig. 2 A summary on the current status of vdW oxide heteroepitaxy 31,34,[36][37][38][39][40] Van der Waals oxide heteroepitaxy Y-H Chu important research direction since the anisotropic property is a key feature in most epitaxial thin film system. (4).…”