This work presents the results from the experimental evaluation of a quantum random number generator circuit over a period of 300 minutes based on a single chip fabricated on the InP platform. The circuit layout contains a gain switched laser diode (LD), followed by a balanced Mach Zehnder Interferometer for proper light power distribution to the two arms of an unbalanced MZI incorporating a 65.4 mm long spiral waveguide that translates the random phase fluctuations to power variations. The LD was gain-switched at 1.3 GHz and the chip delivered a min-entropy of 0.5875 per bit after removal of the classical noise, resulting a total aggregate bit rate of 6.11 Gbps. The recoded data set successfully passed the 15-battery test NIST statistical test suite for all data sets.
During the past years, incorporating Οptical Circuit Switches (OCS) in high-bandwidth optical interconnects has outlined the critical challenges of achieving ultra-low fiber-to-fiber losses (FtF) and constantly decreasing costs for Photonic Integrated Circuits (PICs). This work aims to simultaneously satisfy both the low-loss and low-cost requirements by bringing two of the most successful example-technologies in the history of optics, i.e. EDFAs and ROADMs to a common Si3N4 platform. In particular, the proof-of-concept operation of a lossless four-port Silicon Photonic (SiPho) ROADM is experimentally presented for the first time based on two PIC prototypes on a Si3N4 platform, including a monolithic-integrated 5.9 cm-long spiral Al2O3:Er 3+ Erbium Doped Waveguide Amplifier (EDWA) with 15 dB signal enhancement capabilities and a lattice MZI-interleaver ROAM layout with 100 GHz channel spacing. Considering an ultra-low 2.55 dB FtF loss of the ROADM along with 0.5 dB loss for each of the two coupling-interfaces between the Si3N4 and Al2O3:Er 3+ waveguide layers, a cumulative loss of 3.55 dB is obtained, which can be compensated by the 3.6 dB net gain provided by the EDWA to four incoming WDM signals of -1.7 dBm/channel. Lossless wavelength-routing operation is validated at up to 240 Gb/s WDM (4λ × 60Gb/s) data traffic, while the cascadability of the proposed device is benchmarked in a realistic two-stage optical bus topology with 10 km single mode fiber that selectively routes 4λ × 25Gb/s WDM data channels to any of its eight Drop output ports. This work forms the first demonstration of lossless ROADM operation exclusively on SiPho technology, highlighting a promising roadmap for large scale SiPho switching matrices and more complex PICs co-integrated with EDWAs.
The first demonstration of a lossless four-port silicon photonic ROADM-node based on a monolithic-integrated spiral Al2O3:Er 3+ Erbium Doped Waveguide Amplifier and MZI-interleaver layout on a Si3N4 platform is presented, routing a 4×50Gb/s WDM data-traffic capacity.
On chip waveguide optical amplifiers have been extensively studied over the last years, with a wide variety of materials tested and proposed for different applications. Among the most prominent solutions for on-chip amplification, erbium doped waveguide amplifiers (EDWAs) are able to offer attractive performance metrics that can exceed SOA-based amplification solutions in traditional single and multi-channel systems. In this letter, we experimentally demonstrate a record high 8 × 40 Gbps non return to zero (NRZ) wavelength division multiplexing (WDM) data amplification through a 5.9 cm long on-chip amplifier consisting of an erbium-doped aluminum oxide spiral waveguide monolithically integrated on the Si 3 N 4 platform. Experimental results show more than 12.7 dB amplification per channel for low saturation total input power of −2.75 dBm, and clear eye diagrams and bit-error rate values below the KR4-FEC limit of 2 × 10 −5 for all eight channels without any digital signal processing (DSP) applied to the signal to the receiver or transmitter side. The high losses from the fiber to chip interfaces, however, prevented achieving device net gain.
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