In this paper we present a thorough simulation-based analysis for the design of multi-step couplers bridging seamlessly plasmonic barium titanate oxide (BTO) ferroelectric phase shifters and thick silicon nitride (Si3N4) waveguides for the O-band. The targeted plasmonic waveguides are a hybrid plasmonic waveguide (HPW) providing low propagation losses and a plasmonic metal-insulator-metal (MIM) slot waveguide offering a high confinement factor for high modulation efficiency. The proposed plasmonic platforms are formed by Copper (Cu) providing CMOS compatibility. The analysis is based on 2D-FD eigenvalue and 3D-FDTD numerical simulations targeting to identify the optimum geometries ensuring the lowest coupling losses, calculated as 1.75dB for the HPW geometry and 1.29dB for the MIM configuration. The corresponding confinement factors are 31.39% and 56.2% for the HPW and MIM waveguides, respectively.
We numerically demonstrate a tri-layer CMOS SiN-plasmonic BTO racetrack modulator for the O-band. The device exhibits 3 dB insertion loss, 66.43 GHz resonance 3dB-bandwidth and an extinction ratio higher than 28 dB for 0.5Vpp voltage.
We demonstrate an integrated InP-based phased array relying on a 1×5 splitting structure for beam transformation in WFEs. The electromagnetically calculated beam in the far-field at 1550nm presents perfect agreement with the one experimentally measured.
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