Self-assembly of organosilane molecules at the vapour/solid interface under atmospheric pressure conditions was explored in order to form a monolayer on oxide-covered silicon substrates. Three types of precursors were employed: n-octadecyltrimethoxysilane (ODS: H 3 C(CH 2 ) 17 Si(OCH 3 ) 3 ), n-(6-aminohexyl)aminopropyltrimethoxysilane (AHAPS: H 2 N(CH 2 ) 6 NH(CH 2 ) 3 Si(OCH 3 ) 3 ) and fluoroalkylsilane (FAS: heptadecafluoro-1,1,2,2-tetrahydro-decyl-1-trimethoxysilane, F 3 C(CF 2 ) 7 (CH 2 ) 2 Si(OCH 3 ) 3 ). Characteristics of these self-assembled monolayers (SAMs) formed at a temperature of 100-150• C were studied based on ellipsometry and x-ray photoelectron spectroscopy. Chemical properties of the monolayers were characterized further by water contact angle and z-potential measurements. The SAMs formed from ODS and FAS were hydrophobic so as to show water contact angles of >100• , whereas that of the SAM formed from AHAPS was ∼60• . z-potentials and isoelectric points (IEPs) of SiO 2 substrates covered with each of the SAMs were measured and compared with a naked SiO 2 substrate. The IEPs of the SiO 2 substrate covered with the ODS-or FAS-SAM was pH 3.5-4.0, which was almost the same as those of polyethylene and polytetrafluoroethylene plates, whereas that of the naked SiO 2 substrate was pH ∼2.0, as predicted from results on silica particles. In the case of the AHAPS-SAM, its surface was positively charged under acidic conditions due to protonation of surface amino groups. Consequently, the AHAPS-SAM-covered substrate showed an IEP of pH 7.5-8.0.

The normal cross-sectional area of the spinal cord at any segment in an individual is calculable from measurements of a given single normal segment. This value appears to be an appropriate and practical standard of measurement of the normal morphologic features of the spinal cord.

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Objective-We performed an association study to identify gene polymorphisms for assessing the genetic risk of ischemic or hemorrhagic stroke. Methods and Results-The study population comprised 3151 unrelated Japanese individuals: 1141 stroke patients (636 with atherothrombotic cerebral infarction, 282 with intracerebral hemorrhage, and 223 with subarachnoid hemorrhage) and 2010 controls. The genotypes for 202 polymorphisms of 152 genes were determined by suspension array technology. Multivariable logistic regression analysis with adjustment for conventional risk factors revealed that the -572G3 C polymorphism of the interleukin-6 (IL-6) gene (IL6) was significantly (PϽ0.001) associated with both atherothrombotic cerebral infarction and intracerebral hemorrhage and that the -55C3

This case is reported to raise awareness of herpes simplex encephalitis as a persisting brain disorder. A 66 year old immunocompetent man developed status epilepticus and died of pneumonia in the course of progressive hemiparesis, cognitive decline, and atrophy of the brain over a five year period after herpes simplex encephalitis. In addition to a completely destroyed left temporal lobe, necropsy revealed active encephalitis consisting of necrosis and lymphocyte infiltration with a large number of intranuclear inclusions in the neurones and glial cells in the markedly oedematous parenchyma of the right frontal and parietal lobes. Herpes simplex virus type 1 (HSV-1) antigen was detected by immunohistochemistry, HSV-1 DNA by in situ hybridisation, and herpes simplex virus nucleocapsids by electronmicroscopy. These clinical and pathological findings suggest that direct viral reactivation might result in a relapse of herpes simplex encephalitis, causing progressive clinical deterioration associated with the persistence of HSV-1 in the brain. This is the first case report demonstrating HSV-1 antigen, HSV-1 DNA, and herpes simplex virus nucleocapsids in a case of relapsing herpes simplex encephalitis.H erpes simplex encephalitis is the most common non-epidemic form of viral encephalitis. Its typical clinical presentation is of an acute febrile illness with behavioural abnormalities, decreased level of consciousness, and focal neurological signs. The common neurological sequelae of this disease include memory impairment, behavioural and cognitive abnormality, and secondary epilepsy.1 It has been reported recently, on the basis of the detection of viral DNA and persistent immunohistochemical activity in the brain, that herpes simplex virus type 1 (HSV-1) might persist within the human central nervous system following recovery from encephalitis.2 3 However, the role of persistence of the viral infection and its contribution to neurological sequelae after herpes simplex encephalitis remains obscure.We report the necropsy findings in a case of relapsing herpes simplex encephalitis presenting as progressive neurological deterioration over a five year period following the initial episode of herpes simplex encephalitis. The role of persistent herpes simplex virus infection and the pathogenesis of relapsing herpes simplex encephalitis are discussed in relation to the therapeutic problem. CASE REPORTA 61 year old man with a 10 year history of pneumoconiosis presented at our hospital with high fever and confusion. Three days later, he was admitted to our department because of a tonic-clonic seizure. On admission, he had global aphasia with no limb weakness or sensory disturbance. The initial diagnosis of herpes simplex encephalitis was made by the presence of intrathecal synthesis of antibodies specific to HSV-1 and the presence of HSV-1 DNA in the cerebrospinal fluid detected by polymerase chain reaction (PCR). Brain computed tomography (CT) and magnetic resonance imaging on the day of admission were normal, but single photon ...

We demonstrate a novel lithographic technique utilizing a solvent to fabricate a chemically based semiconductor microdevice from an aqueous solution. According to this technique, SnO2 thin film could be integrated onto predefined sites on a SiO2/Si wafer. A patterned octadecyltrimethoxysilane self‐assembled monolayer (ODS‐SAM) was prepared by vacuum ultraviolet (VUV) irradiation through a photomask to use as a template for the fabrication of a micropatterned SnO2 thin film on the SiO2/Si surface. A Sn‐based thin film was then deposited onto the entire surface of the ODS template from an aqueous solution containing 0.03 mol L–1 of SnCl2·2H2O at 60 °C for 16 h in an ambient atmosphere. The thin film deposited on the methyl‐terminated area of the template was then peeled using an ultrasonic rinse in anhydrous toluene for 30 min, while the film deposited on the silanol area remained intact and undamaged. Rinsing in hydrophilic solvents did not facilitate peeling of the thin film from the methyl‐terminated area. We succeeded by this process in obtaining a high‐resolution, micropatterned Sn‐based thin film on an ODS‐SAM template on Si. The as‐deposited film was composed of fine Sn‐based particles. The sensitivity of this SnO2 thin film to H2 gas increases linearly with improving crystallinity. The effectiveness of anhydrous toluene as a rinse in solution lithography is discussed from the viewpoint of the high hydrophobic affinity between the rinse solvent and the terminal groups in the monolayer template.

Hydrophilization of poly(methyl methacrylate) (PMMA) substrates has been demonstrated using a Xe 2 / excimer lamp radiating vacuum ultraviolet (VUV) light of 172 nm in wavelength. In this study, we have particularly focused on the effects of atmospheric pressure during VUV irradiation. Each of the substrates was photoirradiated with VUV light under a pressure of 10, 10 3 , or 10 5 Pa. Although in each case the hydrophobic PMMA surface became hydrophilic, the water-contact angle and photooxidation rate markedly depended on the atmospheric pressure. The sample treated at 10 Pa was less wettable than the samples treated at 10 3 and 10 5 Pa due to the shortage of oxygen molecules in the atmosphere. The minimum water-contact angles of the samples treated at 10, 10 3 , and 10 5 Pa were about 40, 25, and 24°, respectively. Microfabrication of the PMMA substrates was also demonstrated employing a simple mesh-mask contact method using the same excimer lamp. As confirmed by atomic force microscopy, a photoetched groove composed of 25 × 25 µm 2 features was successfully fabricated on the PMMA substrates. Both the spatial resolution and photoetch depth of the microstructures depended on the atmospheric pressure. At 10 and 10 3 Pa, we achieved finely grooved microstructures at etching rates of 13 and 13.2 nm/min, respectively. In comparison, when the pressure was further increased to 10 5 Pa, the etching rate decreased to 6.9 nm/min and patterning resolution became significantly worse. The pressure of 10 3 Pa was determined to be optimum for accurately defining PMMA surfaces both chemically and geometrically.