Thin films of the intercalated organic-inorganic hybrids (PPy) x MoO 3 (PPy: polypyrrole) have been prepared by an ex-situ intercalation process. The host MoO 3 films were first deposited on LaAlO 3 (LAO) single-crystal substrates by using a CVD method followed by the intercalation of PPy into the MoO 3 films. The preparation of highly b-axis oriented MoO 3 films is crucial to prepare the (PPy) x MoO 3 films. The (PPy) x MoO 3 thin film shows a semiconducting-like transport with an activation energy of 0.21 eV. The (PPy) x MoO 3 thin films show a distinct response to VOCs by increasing their electrical resistivity and exhibit higher sensitivities to polar analytes such as formaldehyde and acetaldehyde, whereas it showed almost no response to toluene and benzene.
Quantitative texture analysis of grain-aligned [ Ca 2 Co O 3 ] 0.62 [ Co O 2 ] ceramics processed by the reactivetemplated grain growth method Highly grain-aligned Ca 3 Co 4 O 9 and (Ca 2.7 Sr 0.2 La 0.1 )(Co 3.9 Cu 0.1 )O 9 ceramics were prepared by the magnetic alignment technique, and then treated by a spark plasma sintering process to increase their bulk densities. Thermoelectric properties were investigated from room temperature to 700°C in air. Grain alignment is effective in lowering the electrical resistivity and has no obvious influence on the Seebeck coefficient, thus resulting in enhancement of the thermoelectric power factor. Substitution of Sr, La and Cu does not appreciably change the electrical resistivity and Seebeck coefficient, but significantly reduces the thermal conductivity.
We demonstrate a novel lithographic technique utilizing a solvent to fabricate a chemically based semiconductor microdevice from an aqueous solution. According to this technique, SnO2 thin film could be integrated onto predefined sites on a SiO2/Si wafer. A patterned octadecyltrimethoxysilane self‐assembled monolayer (ODS‐SAM) was prepared by vacuum ultraviolet (VUV) irradiation through a photomask to use as a template for the fabrication of a micropatterned SnO2 thin film on the SiO2/Si surface. A Sn‐based thin film was then deposited onto the entire surface of the ODS template from an aqueous solution containing 0.03 mol L–1 of SnCl2·2H2O at 60 °C for 16 h in an ambient atmosphere. The thin film deposited on the methyl‐terminated area of the template was then peeled using an ultrasonic rinse in anhydrous toluene for 30 min, while the film deposited on the silanol area remained intact and undamaged. Rinsing in hydrophilic solvents did not facilitate peeling of the thin film from the methyl‐terminated area. We succeeded by this process in obtaining a high‐resolution, micropatterned Sn‐based thin film on an ODS‐SAM template on Si. The as‐deposited film was composed of fine Sn‐based particles. The sensitivity of this SnO2 thin film to H2 gas increases linearly with improving crystallinity. The effectiveness of anhydrous toluene as a rinse in solution lithography is discussed from the viewpoint of the high hydrophobic affinity between the rinse solvent and the terminal groups in the monolayer template.
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