We have optically investigated ternary GaAs 1Àx Sb x (x < 0:58) epilayers and Sn-doped GaAs 1Àx Sb x (x ¼ 0:10{0:14) epilayers grown by molecular beam epitaxy on GaAs (001) substrates. Sn-doped GaAsSb layers were grown as a function of Sn Knudsen-cell temperature, and then characterized by low-temperature photoluminescence (PL) measurements and Hall effect measurements. The Sn-doped GaAsSb films grown at a K-cell temperature of 670 C changed from exhibiting p-type conduction to exhibiting n-type conduction, and showed a maximum PL intensity and a maximum electron mobility of 1900 cm 2 /V s. The PL intensities obtained for Sn-doped GaAsSb films showed a relatively good correlation with the variations in Hall mobility.
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