Growth and characterization of Sn-doped GaAsSb and GaAs epilayers on GaAs (001)

Abstract

Growth and characterization of GaAsSb metamorphic samples on an InP substrate

Surface morphology effects on the optical phonon modes in InAsxSb1–x epilayers on GaAs(001)

“…11, the phonon frequencies of the samples are assigned to InSb‐like LO (191.42 cm –1 ) and TO (182.65 cm –1 ) modes of the epilayers with x = 0.02 while InAs‐like LO (236.49 cm –1 ) and TO (218.04 cm –1 ) modes of the epilayers with x = 0.81. The forbidden TO mode has also been reported in various ternary alloys grown on (001) surface and considered to be caused due to disorder induced effects 12–14. One of the possible reasons for the strong InAs‐like TO mode in Fig.…”

Effect of Sb composition on the conduction type and photoluminescence of heavily Sn‐doped GaAs 1–x Sb x

“…It is known that the intentionally undoped GaAs 1-x Sb x usually exhibits p-type conduction for the entire Sb composition range [1]. As well, in our previous report we showed that n-type GaAs 1-x Sb x with x = 0.11 can be obtained by Sndoping [7]. In the present study, heavily Sn-doped GaAs 1-x Sb x with x ≥ 0.43 exhibited p-type conduction.…”

Si doping of MBE grown bulk GaAsSb on InP

“…There is a variety of Te-containing compounds, like GaTe, Ga 2 Te 3 , PbTe, Sb 2 Te 3 or SnTe, which are preferably used because of the high vapor pressure of pure Te [10]. Additionally, Sn-doping was shown as an alternative to Te [11]. To date there are no detailed reports on MBE grown GaAsSb doped with silicon.…”