Effect of Sb composition on the conduction type and photoluminescence of heavily Sn‐doped GaAs _1–x Sb _x

Abstract

Heavily Sn-doped GaAs 1-x Sb x epitaxial films were grown on SI-GaAs (001) substrates by solid source molecular beam epitaxy. A 5 nm-thick AlSb buffer layer was employed to relax the lattice mismatch between the epilayer and the substrate. X-ray diffraction (XRD), Hall effect measurements and photoluminescence measurements were performed to characterize the epitaxial films. The heavily Sn-doped GaAs 1-x Sb x / AlSb films with x ≤ 0.24 indicated n-type conduction while the epitaxial films with x ≥ 0.43 indicated p-type conduction.