Optical Characterization of Heavily Sn-Doped GaAs_1-xSb_x Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates

Abstract

We have optically investigated ternary GaAs 1Àx Sb x (x < 0:58) epilayers and Sn-doped GaAs 1Àx Sb x (x ¼ 0:10{0:14) epilayers grown by molecular beam epitaxy on GaAs (001) substrates. Sn-doped GaAsSb layers were grown as a function of Sn Knudsen-cell temperature, and then characterized by low-temperature photoluminescence (PL) measurements and Hall effect measurements. The Sn-doped GaAsSb films grown at a K-cell temperature of 670 C changed from exhibiting p-type conduction to exhibiting n-type conduction, and showed a maximum PL intensity and a maximum electron mobility of 1900 cm 2 /V s. The PL intensities obtained for Sn-doped GaAsSb films showed a relatively good correlation with the variations in Hall mobility.

Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

“…However, in spite of the GaAsSb alloy’s potential applications, very little work has been done on the optical properties related to bulk GaAsSb materials 6 7 26 27 , namely, comprehensive spectroscopic characterization at low temperature range. The information about carrier dynamics, optical transition and their temperature dependent near band edge transitions properties are also scarce.…”

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

“…Unfortunately, there have only been a few reports on the optical properties of GaAsSb materials [43][44][45][46][47][48][49][50]. In addition, GaAsSb has been recognized as an important material for use in high-performance optoelectronic devices, and its optical properties are thus significant for the improvement of the performance of these devices.…”

Optical characteristics of GaAsSb alloy after rapid thermal annealing

“…As a consequence, understanding the carrier dynamics of the materials has become one of the key research topics for improving the performance of the devices. In recent years, researchers have focused on their growth technology, quantum well structure and optical properties [4][5][6][7][8][9]. Some researchers have investigated the effect of thermal annealing on GaAsSb-based materials.…”