In dynamic mode control of scanning force microscopy (SFM), optical beam deflection and interferometry are the techniques most used for detection of force gradients by means of a tip and a microcantilever that usually vibrates at the first resonant mode. In order to increase the sensitivity of these kinds of microscopes, one possible means is to investigate the potential of the highest resonance modes which allow an increase in the operating frequencies. For these two detection techniques, according to the local displacement slope, care must be taken in the choice of an appropriate microcantilever point where the laser beam is focused. In this article, an original technique based on simultaneous detection, interferometry, and the beam deflection method is introduced. These techniques are able to characterize within two degrees of freedom, normal displacement and angular deflection, thus resonating the SFM cantilever.
Demagnifying immersion magnetic lenses used for projection electron beam lithography without crossoversScaled measurements of global space-charge induced image blur in electron beam projection system
Electron projection lithography (EPL) is a realistic technology for the 65nm node and below, as a complementary technology of optical lithography especially for contacts and gate layers because of its high resolution and large process margin. Nikon has developed an EPL exposure tool as an electron-beam (EB) stepper and the first generation EB stepper; NSR-EB1A is now almost completed as an R&D tool for the 65nm technology node. Using a ϕ200mm reticle, a 20mm×25mm exposure field is realized. Full-field exposure performance of NSR-EB1A is shown. A 70nm isolated line and 1:1 nested lines are simultaneously resolved, as are 50nm 1:2 nested lines. 60nm contact holes are resolved with a depth of focus over a 10μm range and dosage window over ±6%. Stitching accuracy is about 20nm (3σ) and the single machine overlay is about 30nm (mean + 3σ). These data mean sufficient performance for device manufacturing of the 65nm technology node. The concept of a large subfield is one candidate for resolution and throughput enhancement in EPL production tool. The Coulomb blur is directly measured by an aerial image sensor for a large subfield and small beam half-angle, and the data show good agreement with simulations. It is shown that throughput over 20 wafers per hour (ϕ300mm) is realistic and achievable in a production tool of a 45nm technology node.
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