EPL electron optics performance on test stand.

Hamashima, Muneki; Kojima, Shinichi; Umemoto, Takaaki; Shimizu, Hiroyasu; Ikeda, Junji; Yamada, Atsushi; Takahashi, Satoshi; Yahiro, Takehisa; Shimizu, Sumito; Okamoto, Kazuya; Yamaguchi, Takashi; Miura, Shinichi; Kawata, Shintaro; Suzuki, Kazuaki

doi:10.1016/s0167-9317(03)00180-1

Cited by 5 publications

(1 citation statement)

References 12 publications

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“…[5][6][7][8] The most remarkable feature of the EB stepper is its dynamic exposure motion combining beam deflection and stage scan. [5][6][7][8] The most remarkable feature of the EB stepper is its dynamic exposure motion combining beam deflection and stage scan.…”

Section: Introductionmentioning

confidence: 99%

First dynamic exposure results from an electron projection lithography tool

Suzuki

Fujiwara

Kojima

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Thermal analysis of projection electron beam lithography using complementary mask exposuresCompletion of the β tool and the recent progress of low energy e-beam proximity projection lithography Electron projection lithography ͑EPL͒ is one of the promising technologies below the 65 nm node, especially for contact hole and gate layers. Nikon is developing an EPL exposure tool as an electron beam ͑EB͒ stepper and the first generation EB stepper is now being manufactured. The voltage of 100 kV is adopted for electron beam acceleration. The subfield size is 0.25 mmϫ0.25 mm on the wafer and the deflection width of the electron beam is 5 mm on the wafer. The magnification of the projection optics is 1/4. A 5 mmϫ25 mm area from the 200 mm reticle can be exposed by the combination of beam deflection and stage scanning motion ͑dynamic exposure͒. This area is called ''a mechanical stripe.'' After one mechanical stripe exposure, the reticle and wafer stages turn around and the next exposure of the adjacent mechanical stripe starts as a scan and stitch stage motion. Finally, a 20 mmϫ25 mm exposure field from the 200 mm reticle is exposed. We report the first dynamic exposure in the history of EPL although only a 100 mm reticle was used. A 5 mmϫ10 mm area was used as the mechanical stripe and 10 mmϫ10 mm exposure fields were exposed. 100 nm nested lines were resolved in the entire exposure field and stitching accuracies of 17-18 nm ͑3͒ are obtained. There remain systematic errors, and stitching accuracy less than 15 nm will be achieved after fine adjustment of the subfield positions. We feel the reality of EPL is now sufficiently proven.

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Section: Introductionmentioning

confidence: 99%

First dynamic exposure results from an electron projection lithography tool

Suzuki

Fujiwara

Kojima

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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EPL electron optics performance on test stand.

Kojima

Hamashima

Shimizu

et al. 2003

Microelectronic Engineering

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Nanofabrication of Polymer Surfaces Utilizing Colloidal Lithography and Ion Etching

Agheli

Sutherland

2006

IEEE Trans.on Nanobioscience

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In this paper, we utilize colloidal lithography based on electrostatic self-assembly of polystyrene colloidal particles onto a polymer surface as a nanoscale mask. The pattern is then transferred to the surface by ion beam etching. Each particle acts as an individual mask, resulting in an array of identical structure. Ion beam exposure etches away the unmasked surface between the particles, so the particle mask pattern can be transferred into the polymer surface. This method allows to nanofabricate bulk polymeric surfaces with systematic variation in relief, structure sizes, and aspect ratios. It is a fast, simple, and reliable method to fabricated different polymeric surfaces even on large area samples (> 1 cm2). The structural variation is achieved by use of different conditions during the self-assembly of the mask (e.g., different particles sizes) or different ion etching conditions during the pattern transfer (e.g., ion energy, ion flux, ion incident angle, etching time, gas environment).

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EPL electron optics performance on test stand.

Cited by 5 publications

References 12 publications

First dynamic exposure results from an electron projection lithography tool

First dynamic exposure results from an electron projection lithography tool

EPL electron optics performance on test stand.

Nanofabrication of Polymer Surfaces Utilizing Colloidal Lithography and Ion Etching

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