&lt;title&gt;Nikon EB Stepper: the latest development status&lt;/title&gt;

Suzuki, Kazuaki; Fujiwara, Tomoharu; Hada, Kazunari; Hirayanagi, Noriyuki; Kawata, Shintaro; Morita, Kenji; Okamoto, Kazuya; Okino, Teruaki; Shimizu, Sumito; Yahiro, Takehisa; Yamamoto, Hajime

doi:10.1117/12.436632

Cited by 11 publications

(2 citation statements)

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“…From the results of exposure evaluation using a 100 kV EPL experimental column developed by Nikon, 35 nm isolated patterns were resolved. 4) The EPL tool does not have the pattern generation functions of conventional EB writers, but instead EPL uses a stencil reticle, containing patterns, in the same way as optical steppers. By this means, a larger field size is exposed than in conventional EB writers, giving high throughput together with high resolution.…”

Section: Introductionmentioning

confidence: 99%

Nikon EB stepper: its system design and preliminary performance

et al. 2003

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Electron Projection Lithography (EPL) has a high potential for applicability beyond the ITRS 65 nm node, especially for contacts and gate layers. The concept of synchronization control of the Nikon EB stepper is explained. The reticle stage and the wafer stage are servo controlled to target positions individually. The residual stage position errors are compensated by the electron beam deflection control. The electron beam deflection is feed forward controlled using predicted stage position data from a subsystem called "Filter/Predictor". The performance of the stage position prediction of the Filter/Predictor is described. This paper also reports the performance of the first EB stepper tool, the NSR-EB1A, during its preliminary adjustment phase. Dynamic scanning and stitching exposure, which requires synchronization of both the beam deflection motion and the stage scanning motion, was realized. Dynamic resolution of 100 nm and dynamic subfield stitching accuracy of 25 nm (3σ) were obtained, and further improvement is expected.

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Section: Introductionmentioning

confidence: 99%

Nikon EB stepper: its system design and preliminary performance

et al. 2003

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“…For other EBL systems, such as the variable shaped EB (VSB) systems, and EB projection systems [electron projection lithography (EPL) system and scattering with angular limitation projection electron beam lithography (SCALPEL) system], [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21] the Coulomb blurs have always been obstructive. To achieve high writing/exposure throughput, a large I b is needed.…”

Section: Introductionmentioning

confidence: 99%

130 kV High-Resolution Electron Beam Lithography System for Sub-10-nm Nanofabrication

Okino¹,

Kuba²,

Shibata³

et al. 2013

Jpn. J. Appl. Phys.

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An electron beam lithography (EBL) system, CABL-UH, with a 130 kV high acceleration voltage has been developed that succeeded in minimizing beam size by minimizing Coulomb blur. This system has a short single-stage electron beam (EB) gun with an alignment function of two extractor centers to minimize Coulomb blur. This gun has also succeeded in thoroughly avoiding microdischarges. By adopting this EB gun and many other techniques, high resolution and long-term high stability have been achieved and an extremely fine pattern (4 nm line) has been delineated.

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