We have tried to develop a new procedure to prepare the clean surface of a silicon single crystal. We successfully prepared the contamination free bare silicon surface with ultraviolet cleaning followed by HF dipping with low concentration HF obtained by dilution by organic free ultrapure water, at room temperature under the atmospheric condition. X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and ultraviolet photoelectron spectroscopy measurements proved thus prepared surface has a hydrogen monoatomic layer terminating the dangling bonds of silicon. The hydrogen termination was found to have remarkable passivation effect against surface oxidation reaction. A silicon thin-film epitaxially grown on the prepared surface was confirmed to have perfect crystal structure and high-purity level by scanning electron microscopy, reflection high-energy electron diffraction, Raman spectroscopy and secondary ion mass spectroscopy.
SynopsisThe stabilized fibers prepared by heating PAN and a PAN copolymer in air and under reduced pressure have been examined by IT-IH spectroscopy in order to determine their chemical structures. Three kinds of reactions, cyclization, dehydrogenation, and oxygen uptake are found to occur almost simultaneously in the stabilization process in air by digital difference spectrum method. The effect of the comonomer is confirmed to accelate the dehydrogenation reaction and also the formation of acridone ring in the thermal stabilization in air by kinetic study.
Self-organization of a two-dimensional array of nanoholes which were formed by anodic oxidation of aluminum was investigated quantitatively using fast Fourier transformation (FFT) analysis of scanning electron microscopy (SEM) images. The highly ordered array of nanoholes with diameters of 26 nm was obtained by two-step anodization at anodic voltage around 40 V, and oxalic acid concentration of 0.5 M. A two-dimensional ordered array of Au free standing nanowires was successfully fabricated by the deposition of Au using DC electroplating in nanoholes of aluminum oxide, by removal of the aluminum oxide barrier layer using wet chemical etching. The present method has a high efficiency to fabricate ordered nanowire array of a variety of conductive materials in a large area, and wide applications for fabricating quantum effect devices and materials would be expected.
Articles you may be interested inVariation in surface plasmonic response due to the reorganization of Au nanoparticles in Langmuir-Blodgett film J. Appl. Phys. 116, 024316 (2014); 10.1063/1.4890034 GO and RGO based FETs fabricated with Langmuir-Blodgett grown monolayers AIP Conf.Nanoscale organized assembly of nanoparticulate TiO 2 -stearate monolayers through the Langmuir-Blodgett method J.A highly ordered monolayer film of alkanethiol-encapsulated gold nanoparticles was fabricated on a silicon substrate by using the Langmuir-Blodgett ͑LB͒ method. The effects on the particle order, of the particle concentration and the type of solvent of the LB spreading suspension of encapsulated gold particles, were studied. We found that a low particle concentration of 0.06 -0.3 mg/mL in chloroform is optimal for the fabrication of high quality gold particle monolayers. Since the proposed method is not restricted to gold particles, it is believed to be a practical process for fabricating quantum dot structures of various particle sizes and compositions.
The effects of the surface pressure on the particle arrangement of Langmuir-Blodgett (LB) monolayers of alkanethiol-capped gold nanoparticles were studied. The LB monolayers were prepared from a highly concentrated particle solution, which increases film fabrication efficiency but readily causes small particle voids in the particle array. Overcompressing the LB monolayer to a high surface pressure restructured the particles and eliminated the voids. When the gold particles capped by dodecanethiol were 8.5 nm in diameter, the particle arrangement was vastly improved and a wafer-scale LB monolayer was transferred onto a substrate at the surface pressure of 20 mN/m.
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