We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb2Te3] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.
Electrical properties of stacking faults and bounding partial dislocations in 4H-SiC Schottky diode were investigated by using electron-beam-induced current ͑EBIC͒ and cathodoluminescence ͑CL͒ techniques. EBIC images show that basal plane dislocation is easily dissociated into two partial dislocations ͓Si ͑g͒ 30°and C ͑g͒ 30°partials͔, with a stacking fault between them. The EBIC contrast of C ͑g͒ 30°partial is always several percent higher than that of Si ͑g͒ 30°partial. The stacking fault is brighter than the background, having the negative EBIC contrast. CL spectrum shows that a new peak ͑417 nm͒ appears at stacking fault position. The origin of bright stacking fault in EBIC image is discussed according to its quantum-well state.
The superlattice film with the periodical thin film layers of Sb2Te3/GeTe used as a phase change memory was studied for deposition in the crystal phase. We successfully fabricated the superlattice structure with the sputtering temperature of 200 °C. Moreover, the pillar structure with the size of 70 nm was dry-etched using a HBr/Ar gas mixture.
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