55-&amp;#x00B5;A Ge&lt;inf&gt;x&lt;/inf&gt;Te&lt;inf&gt;1&amp;#x2212;x&lt;/inf&gt;/Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;3&lt;/inf&gt; superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

Takaura, N.; Ohyanagi, Takasumi; Tai, Masayuki; Kinoshita, Masaharu; Akita, Katsushi; Morikawa, Takahiro; Shirakawa, Hideki; Araidai, Masaaki; Shiraishi, Kenji; Saito, Yuta; Tominaga, Junji

doi:10.1109/iedm.2014.7047132

Cited by 15 publications

(26 citation statements)

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“…High resolution TEM images of various CSLs have been measured; some show a Ferro-like ordering7, whereas some show a Petrov like order11. Interestingly one work simultaneously shows both Ferro and Petrov-like ordering in the same image11.…”

mentioning

confidence: 99%

“…There have been a number of experimental demonstrations of the CSL memory567891011, but the switching mechanism is so far not fully defined at an atomic level. There have been several suggestions to explain how the atoms are manipulated, including charge injection12, electric field613, magnetic field6, thermal activation7 and polarization dependent optical control14.…”

mentioning

confidence: 99%

“…1, Model 1 proposes a transition from a Ferro LRS to an Inverted-Petrov structure HRS7815. Model 2 proposes a transition between a Petrov LRS and an Inverted-Petrov HRS111216. As the electrical field is applied normal to the layers, both models have focused primarily on switching as a vertical movement of Ge atoms through a Te atom layer.…”

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confidence: 99%

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Modeling of switching mechanism in GeSbTe chalcogenide superlattices

Robertson

2015

Sci Rep

100

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We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 proposes a transition from Ferro to Inverted Petrov state. Model 2 proposes a switch between Petrov and Inverted Petrov states. For each case, we note that the main transition is actually a vertical displacement of a Ge layer through a Te layer, followed by a lateral motion of GeTe sublayer to the final, low energy structure. Through calculating energy barriers, the rate-determining step is the displacive transition.

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confidence: 99%

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confidence: 99%

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Modeling of switching mechanism in GeSbTe chalcogenide superlattices

Robertson

2015

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100

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“…[14][15][16] Thus, the GeTe layers are sandwiched between thicker Sb 2 Te 3 layer than the primitive cell. Table I and Fig.…”

Section: Simulation Methods and Modelmentioning

confidence: 99%

“…iPCM is a new type of PCM, developed for use as a high speed and low-power-consumption non volatile memory. [12][13][14][15][16] A conventional PCM consists of Ge 2 Sb 2 Te 5 (GST) alloy sandwiched between electrodes. The memory operation is attributed to crystalline-amorphous phase transitions in the GST alloy as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

Shirakawa¹,

Araidai²,

Shiraishi³

2018

Jpn. J. Appl. Phys.

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The interfacial phase change memory (iPCM) based on a GeTe/Sb 2 Te 3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

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Phase‐Change Memory Materials by Design: A Strain Engineering Approach

et al. 2016

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55-µA Ge<inf>x</inf>Te<inf>1−x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

Cited by 15 publications

References 2 publications

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

Phase‐Change Memory Materials by Design: A Strain Engineering Approach

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55-&#x00B5;A Ge<inf>x</inf>Te<inf>1&#x2212;x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

Cited by 15 publications

References 2 publications

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3superlattice

Phase‐Change Memory Materials by Design: A Strain Engineering Approach

Contact Info

Product

Resources

About

55-µA Ge<inf>x</inf>Te<inf>1−x</inf>/Sb<inf>2</inf>Te<inf>3</inf> superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice