Tandem solar cells that pair silicon with a metal halide perovskite are a promising option for surpassing the single-cell efficiency limit. We report a monolithic perovskite/silicon tandem with a certified power conversion efficiency of 29.15%. The perovskite absorber, with a bandgap of 1.68 electron volts, remained phase-stable under illumination through a combination of fast hole extraction and minimized nonradiative recombination at the hole-selective interface. These features were made possible by a self-assembled, methyl-substituted carbazole monolayer as the hole-selective layer in the perovskite cell. The accelerated hole extraction was linked to a low ideality factor of 1.26 and single-junction fill factors of up to 84%, while enabling a tandem open-circuit voltage of as high as 1.92 volts. In air, without encapsulation, a tandem retained 95% of its initial efficiency after 300 hours of operation.

We introduce new hole-selective contacts for next-generation perovskite photovoltaics and point to design paths for molecular engineering of perfect interfaces.

Thermal stability of hybrid solar cells containing spiro-OMeTAD as hole-transporting layer is investigated. It is demonstrated that fully symmetrical spiro-OMeTAD is prone to crystallization, and growth of large crystalline domains in the hole-transporting layer is one of the causes of solar cell degradation at elevated temperatures, as crystallization of the material inside the pores or on the interface affects the contact between the absorber and the hole transport. Suppression of the crystal growth in the hole-transporting layer is demonstrated to be a viable tactic to achieve a significant increase in the solar cell resistance to thermal stress and improve the overall lifetime of the device. Findings described in this publication could be applicable to hybrid solar cell research as a number of well-performing architectures rely heavily upon doped spiro-OMeTAD as hole-transporting material.

The unprecedented emergence of perovskite‐based solar cells (PSCs) has been accompanied by an intensive search of suitable materials for charge‐selective contacts. For the first time a hole‐transporting self‐assembled monolayer (SAM) as the dopant‐free hole‐selective contact in p–i–n PSCs is used and a power conversion efficiency of up to 17.8% with average fill factor close to 80% and undetectable parasitic absorption is demonstrated. SAM formation is achieved by simply immersing the substrate into a solution of a novel molecule V1036 that binds to the indium tin oxide surface due to its phosphonic anchoring group. The SAM and its modifications are further characterized by Fourier‐transform infrared and vibrational sum‐frequency generation spectroscopy. In addition, photoelectron spectroscopy in air is used for measuring the ionization potential of the studied SAMs. This novel approach is also suitable for achieving a conformal coverage of large‐area and/or textured substrates with minimal material consumption and can potentially be extended to serve as a model system for substrate‐based perovskite nucleation and passivation control. Further gains in efficiency can be expected upon SAM optimization by means of molecular and compositional engineering.

The small-molecule-based hole-transporting material methoxydiphenylamine-substituted carbazole was synthesized and incorporated into a CH3NH3PbI3 perovskite solar cell, which displayed a power conversion efficiency of 16.91%, the second highest conversion efficiency after that of Spiro-OMeTAD. The investigated hole-transporting material was synthesized in two steps from commercially available and relatively inexpensive starting reagents. Various electro-optical measurements (UV/Vis, IV, thin-film conductivity, hole mobility, DSC, TGA, ionization potential) have been carried out to characterize the new hole-transporting material.

Small-molecule fluorene HTMs were synthesized and tested in perovskite solar cell, PCE of up to 19.96% was reached.

The vast majority of the hole transporting materials require the use of chemical doping as an essential step for preparation of efficient perovskite solar cells. An oxidized organic hole-transporting material, obtained during a doping procedure, could potentially be one of the weak links in the device composition. It is not uncommon for the solar cell to heat up under summer sun; therefore, all device components must possess some degree of resistance to repetitive thermal stress. In the current publication, a series of oxidized hole-transporting materials have been synthesized and their long-term stability investigated. During thermal stability testing of the films, kept at 100 °C under an inert atmosphere, it was observed that oxidized HTMs start to degrade and partly revert to original unoxidized material. It is known that oxidized HTM, formed during doping, is responsible for the increased conductivity and ultimately for better efficiency of hole extraction process in the PSC device; therefore, observed instability of the oxidized HTMs in the thin films at elevated temperatures could be one of the causes of drop in conductivity reported for the doped spiro-OMeTAD. It could also potentially be one of the reasons why perovskite solar cells lose their efficiency under prolonged thermal stress.

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