This paper describes a new Heterodyne Array Receiver Program (HARP) and Auto‐Correlation Spectral Imaging System (ACSIS) that have recently been installed and commissioned on the James Clerk Maxwell Telescope. The 16‐element focal‐plane array receiver, operating in the submillimetre from 325 to 375 GHz, offers high (three‐dimensional) mapping speeds, along with significant improvements over single‐detector counterparts in calibration and image quality. Receiver temperatures are ∼120 K across the whole band, and system temperatures of ∼300 K are reached routinely under good weather conditions. The system includes a single‐sideband (SSB) filter so these are SSB values. Used in conjunction with ACSIS, the system can produce large‐scale maps rapidly, in one or more frequency settings, at high spatial and spectral resolution. Fully sampled maps of size can be observed in under 1 h. The scientific need for array receivers arises from the requirement for programmes to study samples of objects of statistically significant size, in large‐scale unbiased surveys of galactic and extra‐galactic regions. Along with morphological information, the new spectral imaging system can be used to study the physical and chemical properties of regions of interest. Its three‐dimensional imaging capabilities are critical for research into turbulence and dynamics. In addition, HARP/ACSIS will provide highly complementary science programmes to wide‐field continuum studies and produce the essential preparatory work for submillimetre interferometers such as the Submillimeter Array (SMA) and Atacama Large Millimeter/Submillimeter Array (ALMA).

We study NbTiN resonators by measurements of the temperature dependent resonance frequency and frequency noise. Additionally, resonators are studied covered with SiO x dielectric layers of various thicknesses. The resonance frequency develops a nonmonotonic temperature dependence with increasing SiO x layer thickness. The increase in the noise is independent of the SiO x thickness, demonstrating that the noise is not dominantly related to the low temperature resonance frequency deviations.

Single photon level quality factors of 500x10^3 are shown in NbTiN superconducting resonators at millikelvin temperatures. This result originates from the intrinsic low dielectric loss of NbTiN, as demonstrated by comparison with Ta, and by removing unnecessary parts of the dielectric substrate.Comment: 4 pages, 3 figure

We have fabricated superconducting nanowire single photon detectors made of NbTiN on a silicon substrate. This type of material reduces the dark count rate by a factor of 10 compared to identical NbN detectors, enabling single photon detection with unprecedented signal to noise ratio: we report a noise equivalent power of 10−19 W Hz−1/2 at 4.2 K. The compatibility of our superconducting device with silicon enables its integration with complex structures.

For the Bosch deep silicon dry etch process with SF6–C4F8 a quantitative approach is developed. Essential plasma surface interactions and the transport properties of ions and radicals in high aspect ratio structures are unravelled. Balancing the interactions during etching and passivation pulses is essential for maximal profile control. In the anisotropic regime the etch rate is aspect ratio dependent largely due to depletion of fluorine radicals and with some involvement of passivation polymer redeposition. The anisotropic process tends to stop at a limiting aspect ratio because of improper removal of polymer passivation at the trench bottom. Both higher ion flux and ion energy are found to be crucial to push the Bosch process to higher achievable aspect ratios. Practical process implications are discussed. In situ ellipsometry shows that the polymer passivation step is a complex process with an ion induced component. More efficient removal of the passivation layer at the trench bottom by adjusting the plasma chemistry could further improve the Bosch plasma etch process.