State-of-the-art process-strained Si (PSS) technology featuring single-NiSi Schottky source/drain (S/D) and ultra-thin gate oxide of 1.2 nm is demonstrated for L gate down to 39 nm. +10% performance boost of Schottky-Barrier (SB)-PSS NMOS, as compared to its non-Schottky counterpart, is demonstrated due to series resistance reduction of the silicide S/D and enhanced strain effects. Highest SB-PSS PMOS drive current of 821 µA/µm (at V D = −1.2V and I off =100 nA/µm) is recorded when integrated with recessed Si 1-x Ge x S/D stressor.
The lattice structure and electronic properties of perfect and defective CoSi 2 and NiSi 2 have been calculated using an ab initio plane-wave ultrasoft pseudopotential method based on the generalized gradient approximations (GGA). Special attention is paid to the formation energies of the vacancies, which largely depend on the atomic chemical potentials of Si and metal atom: in Si-rich limit, the formation energies of Si and Co vacancies are 2.39 eV and 0.56 eV whilst those are 1.53 eV and 2.29 eV in Co-rich limit in CoSi 2 , respectively. For NiSi 2 , the formation energies of Si and Ni vacancies are 0.56 eV and 1.25 eV in Si-rich limit and those are 0.04 eV and 2.3 eV in Ni-rich limit.
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