We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/µm with ON/OFF current ratios of around 10 7 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.Index Terms-Buried oxide (BOX), charge-plasma (CP) diode, diode, p-i-n diode, Schottky barrier, silicon-on-insulator (SOI).
We report on a feature for the transistor, a piezoelectric layer to modulate the strain in the channel. The strain is proportional to the gate-source voltage, and thus increases as the device is turned on. As a result, the device has the leakage current of a relaxed device and the lower threshold voltage of a strained device. Our results, obtained by combining electrical and mechanical simulations, demonstrate that strain modulation can result in a 9 mV/decade smaller subthreshold swing for a FinFET.
In this paper we demonstrate a method to extract the electric field dependence of first order piezoelectric parameters. We fit the Mason model to measured frequency dependent electrical impedance data of aluminum-nitride bulk acoustic wave resonators for various DC biasing. The impedance was fitted accurately at the mechanical resonances and in the quasi-static regime well below the resonance frequency. This revealed the dependence of the piezoelectric stiffness, charge constant, and permittivity on the electric field. From this the four second order piezoelectric parameters were calculated.
This paper describes the potential of tunable strain in field-effect transistors to boost performance of digital logic. Voltage-controlled strain can be imposed on a semiconductor body by the integration of a piezoelectric material improving transistor performance. In this paper, we derive the relations governing the subthreshold swing in such devices to improve the understanding. Using these relations and considering the mechanical and technological boundary conditions, we discuss possible device architectures that employ this principle. Further, we review the recently published experimental and modeling results of this device, and give analytical estimates of the power consumption.
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