Extraction of second order piezoelectric parameters in bulk acoustic wave resonators

Hemert, T. van; Reimann, K.; Hueting, R.J.E.

doi:10.1063/1.4725503

Cited by 13 publications

(14 citation statements)

References 25 publications

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“…An alternative method to generate a controlled strain in A1N films by virtue ofthe piezoelectric effect is the application of a DC voltage superimposed to the AC test signal [18]. In this case, the DC field-induced strain (s) in the A1N film can be calculated as…”

Section: Resultsmentioning

confidence: 99%

Frequency response of AlN-based solidly mounted resonators under mechanical stress

Clément

Delicado

Olivares

et al. 2017

Sensors and Actuators A: Physical

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We analyse the performance of solidly mounted bulk acoustic wave resonators under induced mechanical stress to explore their viability as strain sensors. The resonators are made of polycrystalline AIN piezoelectric thin films containing uniformly tilted microcrystals to excite both longitudinal and shear modes. The resonators are grown on top of silicon bars that are fixed at one or two edges using two home-made apparatus specifically designed to induce deformations of several hundreds of microstrains. The induced strain causes frequency shifts of tenths of MHz, yielding strain coefficients of the resonant frequency (SCF) up to-71% per unit strain (-0.71 ppm/fie). The influence of the nature of the resonant mode (shear of longitudinal), the electromechanical coupling factor and the operation frequency on the SCF is analysed.

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Section: Resultsmentioning

confidence: 99%

Frequency response of AlN-based solidly mounted resonators under mechanical stress

Clément

Delicado

Olivares

et al. 2017

Sensors and Actuators A: Physical

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“…There have been several reports on PZT bulk acoustic wave (BAW) resonators reaching GHz speed, for ∼1

m thick layers [ 53 , 54 ]. This even applies to conventional piezoelectric (low polarization) AlN BAW resonators (e.g., [ 55 ]).…”

Section: Discussionmentioning

confidence: 99%

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Hueting

2018

Micromachines

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For some years now, the ever continuing dimensional scaling has no longer been considered to be sufficient for the realization of advanced CMOS devices. Alternative approaches, such as employing new materials and introducing new device architectures, appear to be the way to go forward. A currently hot approach is to employ ferroelectric materials for obtaining a positive feedback in the gate control of a switch. This work elaborates on two device architectures based on this approach: the negative-capacitance and the piezoelectric field-effect transistor, i.e., the NC-FET (negative-capacitance field-effect transistor), respectively π-FET. It briefly describes their operation principle and compares those based on earlier reports. For optimal performance, the adopted ferroelectric material in the NC-FET should have a relatively wide polarization-field loop (i.e., “hard” ferroelectric material). Its optimal remnant polarization depends on the NC-FET architecture, although there is some consensus in having a low value for that (e.g., HZO (Hafnium-Zirconate)). π-FET is the piezoelectric coefficient, hence its polarization-field loop should be as high as possible (e.g., PZT (lead-zirconate-titanate)). In summary, literature reports indicate that the NC-FET shows better performance in terms of subthreshold swing and on-current. However, since its operation principle is based on a relatively large change in polarization the maximum speed, unlike in a π-FET, forms a big issue. Therefore, for future low-power CMOS, a hybrid solution is proposed comprising both device architectures on a chip where hard ferroelectric materials with a high piezocoefficient are used.

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“…On the other hand Hemert et al. criticized the CV method in other research as they concluded that the permittivity is not constant, so the piezoelectric parameters needs further information to be determined by the CV measurement such as the resonance measurements [21] . Zhang et al.…”

Section: Introductionmentioning

confidence: 99%

Electrical extraction of piezoelectric constants

Ahmad

Allataifeh

2018

Heliyon

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The piezoelectric materials are incorporated in smart structure to exhibit specific functionality. The activity of piezoelectric material dimension and electrical properties can be changed with an applied stress. These variations are translated to a change in the capacitance of the structure. This work takes a close outlook on the use of the capacitance-voltage measurements for the extraction of double piezoelectric thin film material deposited at the two faces of a flexible steel sheet. The piezoelectric thin film materials have been deposited using RF sputtering techniques. Gamry analyzer references 3000 was used to collect the capacitance-voltage measurements from both layers. The developed algorithm extracts directly the piezoelectric coefficients knowing the film thickness, the applied voltage, and the capacitance ratio. The capacitance ratio is the ratio between the capacitances of the film when the applied field in antiparallel and parallel to the polling field direction, respectively. The method has been calibrated using a piezoelectric bulk ceramic and validated by comparing the result with the reported values in the literature. The extracted values using the current approach match well the values extracted by other existing methods.

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Extraction of second order piezoelectric parameters in bulk acoustic wave resonators

Cited by 13 publications

References 25 publications

Frequency response of AlN-based solidly mounted resonators under mechanical stress

Frequency response of AlN-based solidly mounted resonators under mechanical stress

The Balancing Act in Ferroelectric Transistors: How Hard Can It Be?

Electrical extraction of piezoelectric constants

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