An MVA-LCD (multi-domain vertical alignment LCD) that provides super-high image quality has been developed by newly introduced rubbing-less technology.A newly introduced "protrusion" designed on the TFT substrates and on the color filter substrates automatically controls the directors of the LC molecules. By this technology we have successively developed four-domain 15" MVA-TFT units that provide extremely wide viewing angle of more than 160 degrees, a high contrast ratio of 300:1 or more and a fast response of less than 25ms.
We have developed a novel fast-switching LCD with multidomain vertical alignment driven by an oblique electric field. The oblique electric field is applied between comb-shaped source electrodes and comb-shaped common electrodes on a TFT substrate and an ITO electrode on a CF substrate covering the entire display area. The ITO electrode is covered by a dielectric layer. The LCD has a wide viewing range (>160°), a high contrast ratio (>250:1) and fast response times even in black-and-white (13 ms (rise), 4 ms (decay)), and gray-scale (<17 ms) switching.The LCD has no problems with electrostatic charge, disclination, or slow gray-scale switching.
We have developed a new MVA-LCD with fast gray-scale response characteristics. The newly designed jagged shaped pixel electrodes give the oblique electric field and effectively control the LC alignment not only statically but also dynamically. We have realized the response time of 30ms (1/3 of the conventional MVA) for any gray-scale switching keeping other advantageous characteristics same; CR, viewing range etc..
Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium–zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 ×109 Pa, whereas the ITO films deposited at 1.5–3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3–3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.
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