Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering

Sasabayashi, T.; Ito, Norihiro; Nishimura, Eriko; Kon, Masato; Song, Pung Keun; Utsumi, K.; Kaijo, Akira; Shigesato, Yuzo

doi:10.1016/j.tsf.2003.08.047

Cited by 151 publications

(74 citation statements)

References 10 publications

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“…For higher working pressures of 2.50 and 3.0 mTorr, the kinetic energy of the sputtered particle reaching the surface of the substrate decreased due to high collision frequency between the sputtered particles and gas molecules. The amorphous nature of the ITO films at high working pressures showed an agreement with the already reported work by Sasabayashi and Song et al [10,13].…”

Section: Methodssupporting

confidence: 91%

“…Such large compressive strain in the films deposited at a low working pressure is believed to be caused by the atomic peening effect [11] lision caused by the increasing working pressure and collision process between the target and the substrate before reaching the substrate surface. Due to high working pressure, all of the Ar 0 reflected at the cathode should be reduced to thermal energy before reaching the substrate [11][12][13]. The sheet resistance and electrical properties of ITO films (i.e.…”

Section: Resultsmentioning

confidence: 99%

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Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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The mechanical properties of ITO films such as adhesion and internal stress are very important for the commercial application of solar cell devices. We report high quality pulsed DC magnetron sputtered ITO films deposited on silicon and glass substrates with low resistivity and high transmittance for various working pressures ranging from 0.96 to 3.0 mTorr. ITO films showed the lowest resistivity of 2.68×10 -4 Ω·cm, high hall mobility of 46.89 cm 2 /V.s, and high transmittance (>85%) for the ITO films deposited at a low working pressure of 0.99 mTorr. The ITO films deposited at a low working (0.96 mTorr) pressure had both amorphous and polycrystalline structures and were found to have compressive stress while the ITO films deposited at higher temperature than 0.99 mTorr was mixture of amorphous and polycrystalline and was found to have tensile stress.

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Section: Methodssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Kang¹,

Le²,

Park³

et al. 2016

Transactions on Electrical and Electronic Materials

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“…• C for 1 h have an amorphous structure [4]. However, for films with x < 0.1, it is expected that the annealing effect in air improves the material properties.…”

Section: Introductionmentioning

confidence: 99%

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Makise¹,

Kokubo²,

Takada³

et al. 2008

Science and Technology of Advanced Materials

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Thin polycrystalline zinc-doped indium oxide (In 2 O 3 -ZnO) films were prepared by post-annealing amorphous films with various weight concentrations x of ZnO in the range 0 x 0.06. We have studied the dependences of the resistivity ρ and Hall coefficient on temperature T and magnetic field H in the range 0.5 T 300 K, H 6 Tfor 350 nm films annealed in air. Films with 0 x 0.03 show the superconducting resistive transition. The transition temperature T c is below 3.3 K and the carrier density n is about 10 25 -10 26 m −3 . The annealed In 2 O 3 -ZnO films were examined by transmission electron microscopy and x-ray diffraction analysis revealing that the crystallinity of the films depends on the annealing time. We studied the upper critical magnetic field H c2 (T ) for the film with x = 0.01. From the slope of dH c2 /dT , we obtain the coherence length ξ(0) ≈ 10 nm at T = 0 K and a coefficient of electronic heat capacity that is small compared with those of other oxide materials.

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“…The electrical properties can be understood in terms of the working hypothesis of wide band gap conducting oxides [32,33]. Inverse photoelectron and molecular orbital studies show that the density of states of conduction band bottom of amorphous TCOs are almost the same as in the crystalline material [20,34].…”

mentioning

confidence: 99%

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

et al. 2011

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Abstract:Indium tin oxide (ITO) is one of the widely used transparent conductive oxides (TCO) for application as transparent electrode in thin film silicon solar cells or thin film transistors owing to its low resistivity and high transparency. Nevertheless, indium is a scarce and expensive element and ITO films require high deposition temperature to achieve good electrical and optical properties. On the other hand, although not competing as ITO, doped Zinc Oxide (ZnO) is a promising and cheaper alternative. Therefore, our strategy has been to deposit ITO and ZnO multicomponent thin films at room temperature by radiofrequency (RF) magnetron cosputtering in order to achieve TCOs with reduced indium content. Thin films of the quaternary system Zn-In-Sn-O (ZITO) with improved electrical and optical properties have been achieved. *Manuscript Click here to view linked ReferencesThe samples were deposited by applying different RF powers to ZnO target while keeping a constant RF power to ITO target. This led to ZITO films with zinc content ratio varying between 0 and 67 %. The optical, electrical and morphological properties have been thoroughly studied.The film composition was analysed by X-ray Photoelectron Spectroscopy. The films with 17 % zinc content ratio showed the lowest resistivity (6.6×10 -4 Ωcm) and the highest transmittance (above 80 % in the visible range). Though X-ray Diffraction studies showed amorphous nature for the films, using High Resolution Transmission Electron Microscopy we found that the microstructure of the films consisted of nanometric crystals embedded in a compact amorphous matrix. The effect of post deposition annealing on the films in both reducing and oxidizing atmospheres were studied. The changes were found to strongly depend on the zinc content ratio in the films.

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Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering

Cited by 151 publications

References 10 publications

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Superconductivity in transparent zinc-doped In₂O₃films having low carrier density

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

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Comparative study on structure and internal stress in tin-doped indium oxide and indium-zinc oxide films deposited by r.f. magnetron sputtering

Cited by 151 publications

References 10 publications

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Study on the Structural and Mechanical Characteristics of ITO Films Deposited by Pulsed DC Magnetron Sputtering

Superconductivity in transparent zinc-doped In2O3films having low carrier density

Electrical and optical properties of Zn–In–Sn–O transparent conducting thin films

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Product

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Superconductivity in transparent zinc-doped In₂O₃films having low carrier density