Spectra of thermally stimulated charge release (TSCR) in SiSiO2 structures are investigated in the temperature range from 5 to 30 K under conditions of different polarities of the voltage applied. A set of levels in the range from 0.013 to 0.062 eV and from 0.036 to 0.071 eV is observed in the case of n‐type and p‐type silicon substrates, respectively. Effects of magnetic field and laser beam irradiation on TSCR spectra is studied. The TSCR. spectra observed are explained by recharging of traps located in the transitional region between SiO2 and Si. Such a recharging is assumed to be assisted by the effect of localized phonons.
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