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Device characteristics of a new type of O2 gaseous sensor are presented. These sensors are fabricated in the MIS configuration PdSnOX-Si3N4-Si02-Si-A1 with highly resistive SnO, as an oxygen adsorptive element. Partial pressures of O2 below 0.1 torr can be detected at room temperature by these devices. Steady-state and transient behavior are described as a function of O2 partial pressure and temperature. Adsorption and desorption rates and time constants are determined. Activation energy for O2 adsorption in SnO, is found to be 1.6 K cal/ mole. S