Transition metal-gate MOS gaseous detectors

Poteat, T.L.; Lalevic, B.

doi:10.1109/t-ed.1982.20668

Cited by 88 publications

(14 citation statements)

References 9 publications

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“…On the other hand, it is reported that voltage shifts in C-V characteristics in Pd-metal oxide semiconductor (MOS) structure on p-Si show negative values in the presence of hydrogen at 473 K [ 2 ], suggesting that the Pd work function apparently decreases. Similar voltage shifts of the C-V characteristics in Pd-MOS structure upon hydrogen exposure were observed even at 293 K [ 6 ]. These results seem not to be consistent with literatures which report that the Pd work function increases unless at quite low temperatures, implying that the change in the Pd work function is not the dominant factor for hydrogen sensitivity.…”

Section: Introductionsupporting

confidence: 56%

First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces

Irokawa

Usami²

2015

Sensors

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The interaction of hydrogen with Pd-SiO2 interfaces has been investigated for the first time using first-principles calculations based on density functional theory. The hydrogen-induced polarization at the Pd-SiO2 interfaces was evaluated using Pd-SiO2 interface supercells. As a result, the potential change induced by interfacial hydrogen atoms was not observed even for hydrogen concentration of ~1.3 × 1015 cm−2 at the Pd-SiO2 interface. This result implies that hydrogen does not create an electric double layer at the Pd-SiO2 interface but change the property of the SiO2 region, resulting in the hydrogen sensitivity of the devices.

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Section: Introductionsupporting

confidence: 56%

First-Principles Studies of Hydrogen Adsorption at Pd-SiO2 Interfaces

Irokawa

Usami²

2015

Sensors

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“…A shift in the threshold voltage is therefore correlated to the modulation of the work function at the semiconductor-insulator interface induced by the adsorption of the polar molecules. The threshold voltage change can be estimated according to the Poisson equation [47,48]. Oxidizing molecules such as nitrogen dioxide and 2,4-dinitrotoluene, on the other hand, enhance the hole charge density, shifting the threshold voltage in positive direction [31,44].…”

Section: Resultsmentioning

confidence: 99%

An organic field effect transistor as a selective NOx sensor operated at room temperature

Marinelli

Dell’Aquila

Torsi

et al. 2009

Sensors and Actuators B: Chemical

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“…In fact, V th shifts in a negative direction after N 2 O exposure. The consequent change in voltage across the dipole layer can be solved using Poisson's equation, the result of which is given by [15,16] …”

Section: Resultsmentioning

confidence: 99%