PdInP Schottky diode hydrogen sensors

Yousuf, Mujeeb; Kuliyev, B.; Lalevic, B.; Poteat, T.L.

doi:10.1016/0038-1101(82)90205-2

Cited by 36 publications

(12 citation statements)

References 7 publications

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“…From the rapid progress in semiconductor materials and devices, solid-state hydrogen sensors based on the Schottky diode structure with a catalytic palladium metal have attracted intensive interest. 10,140 varies exponentially with the lowering of the hydrogeninduced Schottky barrier height. 141 Therefore, these Schottky diodes often exhibit excellent hydrogen detection sensitivities.…”

Section: Silicon Based Schottky Diodesmentioning

confidence: 99%

“…Yousuf et al demonstrated essentially high hydrogen response in the J-V characteristics of a Pd/InP Schottky diode. 10 Although enormous current variations are observed, the low barrier height associated with the high defect state density at the Pd/InP interface severely restricts the allowable variation in the barrier height. Recently, electroplating techniques have also been proposed to fabricate the Pd/InP Schottky diodes.…”

Section: Inp Based Schottky Diodesmentioning

confidence: 99%

“…Schottky barrier based gas sensors have been fabricated with a number of inorganic semiconductors using catalytic metals as the metal contact, − mostly for detection of hydrogen. Due to various hydrogen-induced changes in catalytic metals, the change of the interface properties of the Schottky barrier diode readily lends itself to applications in interface-controlled sensors devices .…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor Junction Gas Sensors

2008

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Section: Silicon Based Schottky Diodesmentioning

confidence: 99%

Section: Inp Based Schottky Diodesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Semiconductor Junction Gas Sensors

2008

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“…Over the past years, many solid-state hydrogen sensors, based on different materials, have been studied and reported [1][2][3][4]. Beside sensors based on silicon, compound semiconductor-based sensors are another choice due to their higher hydrogen detection sensitivity, widespread operating temperature, and shorter response time [5][6][7][8][9]. Recently, transistor type hydrogen sensors have attracted remarkable attention [10,11].…”

Section: Introductionmentioning

confidence: 99%

Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

Lin

Chang

2006

Sensors and Actuators B: Chemical

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“…Previously, metal oxide semiconductor ͑MOS͒ Schottky diodes and MOS field-effect transistors ͑MOSFETs͒ with the catalytic metal were reported to exhibit the impressive hydrogen sensing characteristics. [1][2][3] To produce more sensitive hydrogen sensing devices, Schottky diodes based on III-V compound semiconductors, such as InP, 4,5 GaAs, 6,7 GaP, 8 InGaP, 9 AlGaAs, 10 GaN, 11,12 and AlGaN, 13,14 have been widely studied. However, little has been reported related to the InAlP material system for microsensor application.…”

mentioning

confidence: 99%

On the Hydrogen Sensing Properties of a Pt-Oxide-In[sub 0.5]Al[sub 0.5]P Schottky Diode

Tsai¹,

Hung²,

Fu³

et al. 2006

Electrochem. Solid-State Lett.

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A new Pt-InAlP metal oxide semiconductor Schottky diode hydrogen sensor with highly sensitive hydrogen detection among wide operating temperature regime is demonstrated and studied. Experimentally, the studied hydrogen sensor can be operated systematically either under forward or reverse bias conditions. At 30°C, the relatively hydrogen detection ratio S r value is increased from 108.8% ͑107.4%͒ to 943.1% ͑1337.3%͒, under the forward ͑reverse͒ bias of 0.3 V, when the hydrogen concentration is increased from 4.3 to 9970 ppm H 2 /air. Note that even an extremely low hydrogen concentration of 4.3 ppm H 2 /air can be effectively detected at the temperature of 30-250°C.Over past years, semiconductor-type hydrogen sensors have attracted considerable attention in many applications, e.g., industrial fabrication processes, medical installations, laboratories, and fueled motor vehicles. Generally, the criteria used to evaluate a hydrogen sensor include high sensitivity, chemical selectivity, high linearity, short response time, small size, reproducibility, simple operation, ease of fabrication, and wide operating temperature regimes. Previously, metal oxide semiconductor ͑MOS͒ Schottky diodes and MOS field-effect transistors ͑MOSFETs͒ with the catalytic metal were reported to exhibit the impressive hydrogen sensing characteristics. 1-3 To produce more sensitive hydrogen sensing devices, Schottky diodes based on III-V compound semiconductors, such as InP, 4,5 GaAs, 6,7 GaP, 8 InGaP, 9 AlGaAs, 10 GaN, 11,12 and AlGaN, 13,14 have been widely studied. However, little has been reported related to the InAlP material system for microsensor application. Due to the inherent large energy bandgap ͑E g Ϸ 2.3 eV͒, In 0.5 Al 0.5 P-based devices are expected to be operated under high-temperature environments. Also, because the In 0.5 Al 0.5 P material is lattice-matched to GaAs, the In 0.5 Al 0.5 P is suitable for application in heterojunction bipolar transistor ͑HBT͒ and high electron mobility transistor ͑HEMT͒ devices. 15,16 From the hydrogen detection point of view, the high-sensitivity hydrogen sensor based on a Schottky diode with a catalytic Pt metal can be expected, as the Schottky diode current depends exponentially on the change of Schottky barrier height. 17 In addition, Schottky diodes with a thin oxide layer exhibit higher sensitivity and larger modulation of barrier height. 18,19 It has been pointed out that low barrier height and high leakage current resulting from the large surface state density could be improved by the existence of an interfacial oxide layer. 20,21 Therefore, in this work, an interesting InAlP/GaAs MOS Schottky diode hydrogen sensor with highly sensitive hydrogen detection in a wide operating temperature regime is demonstrated and studied. ExperimentalThe studied Pt/In 0.5 Al 0.5 P Schottky diode hydrogen sensor structure was grown on an ͑100͒ oriented semi-insulated ͑S.I.͒ GaAs substrate by a metlalorganic chemical vapor deposition ͑MOCVD͒ system. It consisted of a 5000 Å thick GaAs undoped buffer layer,...

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PdInP Schottky diode hydrogen sensors

Cited by 36 publications

References 7 publications

Semiconductor Junction Gas Sensors

Semiconductor Junction Gas Sensors

Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

On the Hydrogen Sensing Properties of a Pt-Oxide-In[sub 0.5]Al[sub 0.5]P Schottky Diode

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