1982
DOI: 10.1016/0038-1101(82)90205-2
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PdInP Schottky diode hydrogen sensors

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Cited by 36 publications
(12 citation statements)
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“…From the rapid progress in semiconductor materials and devices, solid-state hydrogen sensors based on the Schottky diode structure with a catalytic palladium metal have attracted intensive interest. 10,140 varies exponentially with the lowering of the hydrogeninduced Schottky barrier height. 141 Therefore, these Schottky diodes often exhibit excellent hydrogen detection sensitivities.…”
Section: Silicon Based Schottky Diodesmentioning
confidence: 99%
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“…From the rapid progress in semiconductor materials and devices, solid-state hydrogen sensors based on the Schottky diode structure with a catalytic palladium metal have attracted intensive interest. 10,140 varies exponentially with the lowering of the hydrogeninduced Schottky barrier height. 141 Therefore, these Schottky diodes often exhibit excellent hydrogen detection sensitivities.…”
Section: Silicon Based Schottky Diodesmentioning
confidence: 99%
“…Yousuf et al demonstrated essentially high hydrogen response in the J-V characteristics of a Pd/InP Schottky diode. 10 Although enormous current variations are observed, the low barrier height associated with the high defect state density at the Pd/InP interface severely restricts the allowable variation in the barrier height. Recently, electroplating techniques have also been proposed to fabricate the Pd/InP Schottky diodes.…”
Section: Inp Based Schottky Diodesmentioning
confidence: 99%
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“…Over the past years, many solid-state hydrogen sensors, based on different materials, have been studied and reported [1][2][3][4]. Beside sensors based on silicon, compound semiconductor-based sensors are another choice due to their higher hydrogen detection sensitivity, widespread operating temperature, and shorter response time [5][6][7][8][9]. Recently, transistor type hydrogen sensors have attracted remarkable attention [10,11].…”
Section: Introductionmentioning
confidence: 99%
“…Previously, metal oxide semiconductor ͑MOS͒ Schottky diodes and MOS field-effect transistors ͑MOSFETs͒ with the catalytic metal were reported to exhibit the impressive hydrogen sensing characteristics. [1][2][3] To produce more sensitive hydrogen sensing devices, Schottky diodes based on III-V compound semiconductors, such as InP, 4,5 GaAs, 6,7 GaP, 8 InGaP, 9 AlGaAs, 10 GaN, 11,12 and AlGaN, 13,14 have been widely studied. However, little has been reported related to the InAlP material system for microsensor application.…”
mentioning
confidence: 99%