2006
DOI: 10.1016/j.snb.2005.11.049
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Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

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Cited by 14 publications
(7 citation statements)
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“…Hence, the effective magnitude of ε bi and Schottky barrier height B at M-S interface is decreased. 15,16 In other words, more introduced hydrogen atoms result in the larger decrease of Schottky barrier height. Under the applied voltage of 0.3 V, the I A current is 2.69 × 10 −9 A under air ambience.…”
Section: Resultsmentioning
confidence: 99%
“…Hence, the effective magnitude of ε bi and Schottky barrier height B at M-S interface is decreased. 15,16 In other words, more introduced hydrogen atoms result in the larger decrease of Schottky barrier height. Under the applied voltage of 0.3 V, the I A current is 2.69 × 10 −9 A under air ambience.…”
Section: Resultsmentioning
confidence: 99%
“…Reliable, compact, low cost, and higher temperature operating hydrogen sensors are needed for monitoring ambient air for leaked hydrogen. Therefore, hydrogen sensors based on typical semiconductor device structures, i.e., Schottky barrier diodes (SBDs) [1][2][3][4][5][6][7][8][9] and field-effect transistors (FETs) [10][11][12][13][14][15][16], with catalytic metal electrodes are highly expected. However, the gas sensors based on Si and GaAs cannot be operated at high temperatures because of its narrow band gap energy.…”
Section: Introductionmentioning
confidence: 99%
“…Reliable, compact, low cost, and higher temperature operating hydrogen sensors are needed for monitoring ambient air for leaked hydrogen. Therefore, the hydrogen sensors based on typical semiconductor device structures, i.e., Schottky diode [1][2][3][4][5][6][7][8][9] and field-effect transistor [10][11][12][13][14][15][16], with catalytic metal electrode are highly expected. However, the gas sensors based on Si and GaAs [1,2,11] cannot be operated at high temperatures because of its small bandgap energy.…”
mentioning
confidence: 99%