Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

Lin, Kun‐Wei; Chang, R. P H

doi:10.1016/j.snb.2005.11.049

Cited by 14 publications

(7 citation statements)

References 15 publications

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“…Hence, the effective magnitude of ε bi and Schottky barrier height B at M-S interface is decreased. 15,16 In other words, more introduced hydrogen atoms result in the larger decrease of Schottky barrier height. Under the applied voltage of 0.3 V, the I A current is 2.69 × 10 −9 A under air ambience.…”

Section: Resultsmentioning

confidence: 99%

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Hsu

Lin

Liu

2013

J. Electrochem. Soc.

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An interesting integrated gas sensing system, based on an AlGaN/GaN heterostructure compound semiconductor is developed and investigated. This gas detecting system consists of triple gas sensors and a gas sensing readout circuitry. Good gas sensing responses with remarkable current variations of 5.56 mA (@1000 ppm H 2 /air), 19.06 μA (@1000 ppm NH 3 /air), and 0.82 mA (@100 ppm NO 2 /air) are obtained at 200 • C, respectively. The corresponding transient states are also demonstrated in this work. From the employed detecting readout system, the gas concentrations of introduced gases (H 2 , NH 3 , and NO 2 ) could be appropriately determined and identified. In addition, a novel gray polynomial differential model (GPDM) is employed to effectively reduce redundant gas sensing data and decrease the data transmission load. From experimental results, the studied integrated gas detecting system shows advantages of multiple gas detection capability, easy operation, low cost, and high portability. Therefore, this gas sensing system shows the promise for high-performance multiple gas detecting applications.

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Section: Resultsmentioning

confidence: 99%

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Hsu

Lin

Liu

2013

J. Electrochem. Soc.

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“…Reliable, compact, low cost, and higher temperature operating hydrogen sensors are needed for monitoring ambient air for leaked hydrogen. Therefore, hydrogen sensors based on typical semiconductor device structures, i.e., Schottky barrier diodes (SBDs) [1][2][3][4][5][6][7][8][9] and field-effect transistors (FETs) [10][11][12][13][14][15][16], with catalytic metal electrodes are highly expected. However, the gas sensors based on Si and GaAs cannot be operated at high temperatures because of its narrow band gap energy.…”

Section: Introductionmentioning

confidence: 99%

Selective hydrogen detection of Pd/AlGaN/GaN HEMT-type sensors by temperature sweep operation

2012

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We have demonstrated the selective hydrogen gas detection of Pd/AlGaN/GaN high electron mobility transistors-based hydrogen sensors by the temperature sweep operation. The sensitivity-temperature spectra of the Pd/AlGaN/GaN HEMT hydrogen sensors in the range of 30°C to 350°C were measured in hydrogen, methane and propane with various concentrations of diluted with nitrogen. It is found that the different gases have the characteristic sensitivitytemperature spectra with the different peak positions, which is due to the decomposition temperature of each gas. The maximum sensitivities to hydrogen and propane are obtained at about 230°C and 310°C, respectively. The temperature sweep detection is very useful technique for the selective gas detection for the Pd/AlGaN/GaN HEMT-based gas sensors.

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“…Reliable, compact, low cost, and higher temperature operating hydrogen sensors are needed for monitoring ambient air for leaked hydrogen. Therefore, the hydrogen sensors based on typical semiconductor device structures, i.e., Schottky diode [1][2][3][4][5][6][7][8][9] and field-effect transistor [10][11][12][13][14][15][16], with catalytic metal electrode are highly expected. However, the gas sensors based on Si and GaAs [1,2,11] cannot be operated at high temperatures because of its small bandgap energy.…”

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confidence: 99%

Detection of ppm‐order hydrogen gas by Pd/AlGaN/GaN high electron mobility transistor‐based sensors

Nakamura

Takahashi

Okumura

2009

Phys. Status Solidi (c)

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The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated under various hydrogen concentrations. Remarkable current variation, as high as 1.7 mA at the drain‐source voltage of 4 V and gate‐source voltage of 0 V, was observed at 140 °C even at 1 part per million (ppm) hydrogen concentration. The logarithmic relation between the detection current variation and the hydrogen concentration was observed. By using the least‐square fit to the experimental data, the reliable lower detection value of hydrogen concentration for the present device can be estimated to be about 0.45 ppm, i.e., 450 parts per billion (ppb) as a current variation of 1 mA. In addition, the turn‐on and turn‐off transient times have been estimated to be approximately 23 and 33 seconds at 160 °C, respectively, in the case of the 100 ppm hydrogen gas. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Comprehensive study of pseudomorphic high electron mobility transistor (pHEMT)-based hydrogen sensor

Cited by 14 publications

References 15 publications

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

On an Integrated Gas Sensing System Based on an AlGaN/GaN Heterostructure Compound Semiconductor

Selective hydrogen detection of Pd/AlGaN/GaN HEMT-type sensors by temperature sweep operation

Detection of ppm‐order hydrogen gas by Pd/AlGaN/GaN high electron mobility transistor‐based sensors

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