Long wavelength avalanche photodiodes have been fabricated using bulk Hg 1 _ .. Mn .. Te (0.10 < x < 0.12) single crystals, grown by the traveling heater method. Avalanche multiplication gains (M) greater than 40 and 10 were obtained at wavelengths of 7 and 10.6 fLm, respectively. The ionization coefficient ratio of electrons to holes was determined experimentally from the measurements of the excess noise versus the avalanche multiplication factor. At both wavelengths, the ionization coefficient ratio was found to be approximately 12.
This paper discusses four types of (Hg,Cd)Te photodiodes developed recently at the Honeywell Radiation Center: 1. 2.06µm ( Hg,Cd)Te avalanche photodiodes 2. 10.64m ( Hg,Cd)Te photodiodes 3.High D* 10.611m photodiodes with RoA products of 0.7 ohm -cm2 4.Thermoelectrically cooled 10.64m photomixers The 2.06µm avalanche photodiodes were developed for the Q-switched Ho:YLF laser. The structures exhibited avalanche gains from 9 to 36. The 10.6µm photodiodes have average quantum efficiencies of 30 percent. This program has produced 5 element linear arrays with 250[1m x 2504m elements, 174m spacing and 350 MHz bandwidth.RoA products as high as 0.7 ohm -cm2 have also recently become possible in 10.64m (Hg,Cd)Te photodiodes. 10.64m diodes operating at 170 °K with a 6 -stage thermoelectric cooler have high quantum efficiency (20 %) and moderate D* and are suitable for direct detection or heterodyne applications requiring 100 MHz bandwidth.2.064m ( Hg,Cd)Te Photodiodes
A unique process for fabricating HgCdTe photodiodes directly on a variety of substrate materials has been developed. This process, which can achieve fill factors in excess of 90 %, has the advantages of minimal thermal mismatch, less than 1% crosstalk and scaling to large array sizes.
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