<title>Advanced (Hg,Cd)Te Photodiodes For Infrared Applications</title>

Abstract

This paper discusses four types of (Hg,Cd)Te photodiodes developed recently at the Honeywell Radiation Center: 1. 2.06µm ( Hg,Cd)Te avalanche photodiodes 2. 10.64m ( Hg,Cd)Te photodiodes 3.High D* 10.611m photodiodes with RoA products of 0.7 ohm -cm2 4.Thermoelectrically cooled 10.64m photomixers The 2.06µm avalanche photodiodes were developed for the Q-switched Ho:YLF laser. The structures exhibited avalanche gains from 9 to 36. The 10.6µm photodiodes have average quantum efficiencies of 30 percent. This program has produced 5 element linear arrays with 250[1m x 2504m elements, 174m spacing and 350 MHz bandwidth.RoA products as high as 0.7 ohm -cm2 have also recently become possible in 10.64m (Hg,Cd)Te photodiodes. 10.64m diodes operating at 170 °K with a 6 -stage thermoelectric cooler have high quantum efficiency (20 %) and moderate D* and are suitable for direct detection or heterodyne applications requiring 100 MHz bandwidth.2.064m ( Hg,Cd)Te Photodiodes

Uncooled long wavelength infrared photon detectors

“…As early as in 1975, Koehler and Chiang [18] reported n þ -p 10.6 lm photodiodes operated at 170 K. Shanley et al [19] showed a capability of achieving bandwidths of 475-725 MHz, quantum efficiency of 78%, an R 0 A product of 0.006 X cm 2 and fairly good heterodyne sensitivity of 1.3 · 10 19 W/Hz at a temperature of 145 K. Extension of operational temperature to 185-200 K was suggested with a proper adjustment of bandgap and doping level. Gordon [13] discussed possible operation of a 9.5 lm photodiode array using optical immersion with microlenses at temperatures 150-245 K. The practical 128-element array based on the loophole technology with silicon microlenses has been reported by Jones et al [14].…”