Doping with Be was found to be very effective for shortening of carrier lifetime in InGaAs/InAlAs multiple quantum wells (MQWs) grown at low temperature by molecular beam epitaxy. The MQW materials have carrier lifetimes controllable from a few tens of picoseconds to 1 ps in the 1.55-μm wavelength region, coupled with a large optical nonlinearity due to an excitonic feature, implying applicability to ultrafast optical devices in the fiber-optic communication. The carrier lifetime was measured by a time-resolved pump-probe method using an optical source based on a 1.535-μm semiconductor laser. We also investigated the resistivity, carrier density, and Hall mobility in the MQWs.

This study has demonstrated that the systematic lymphadenectomy had benefit only in patients with ovarian cancer macroscopically confined to the pelvis. In patients with clear cell adenocarcinoma, systematic lymphadenectomy was beneficial. To the contrary, systematic lymphadenectomy had no benefit on OS or PFS in patients with advanced ovarian cancer if optimally debulked.

Extreme ultraviolet (EUV) emission from Xe plasma in the λ=13.5nm band is theoretically investigated for lithographic application. It appears that a large number of satellite lines due to the 4d–4f, 4d–5p, and 4p–4d transitions significantly contribute to the emission over the spectral range from 10to17nm. At electron densities above 1020∕cm3, laser-produced Xe plasmas attain quasilocal thermodynamic equilibrium (LTE) in order to make the emission intensity in the 13.5nm band comparable to that in the 11nm band.

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