Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers

Motosugi, George; Kagawa, T.

doi:10.1143/jjap.19.2303

Cited by 36 publications

(18 citation statements)

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“…Gallium antimonide (GaSb) thin films are attractive platforms for energy conversion technologies. For example, crystalline films of GaSb function as the absorber layers and /or substrate in the most efficient thermophotovoltaics [1][2][3], as deposition substrates for lattice matched ternary (AlGaSb, InAsSb) and quaternary (AlGaAsSb, InGaAsSb) alloys [4,5], as infrared-capturing cells in tandem solar cells [6] and as the lasing medium in low voltage diode lasers [7]. Unfortunately, the current methods (e.g.…”

Section: Introductionmentioning

confidence: 99%

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

DeMuth

Fahrenkrug

et al. 2016

Electrochimica Acta

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Direct electrodeposition of phase-pure crystalline gallium antimonide (GaSb) films has been achieved at low processing temperatures from an aqueous electrolyte. A liquid gallium electrode was used to drive the electroreduction of Sb 2 O 3 dissolved in 0.6 M NaOH. The quality and purity of the resultant films produced depended strongly on the chosen conditions, including temperature, time, and concentration of dissolved Sb 2 O 3. Under select conditions, the direct production of polycrystalline films of GaSb was possible. Raman spectroscopy, powder X-ray diffraction, selected area electron diffraction, scanning electron microscopy, and transmission electron microscopy were separately used to analyze the identity and crystallinity of the electrodeposited films. The cumulative data showed that this electrodeposition process followed the features common both to conventional electrodeposition and melt crystal growth. Accordingly, this electrodeposition process could not be categorized as electrodeposition followed by annealing. Rather, the data implicate this method is akin to a hybrid electrodeposition solution-based crystal growth, where crystalline GaSb films could be grown up to thicknesses of 1 µm in 60 min.

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Section: Introductionmentioning

confidence: 99%

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

DeMuth

Fahrenkrug

et al. 2016

Electrochimica Acta

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“…The GaSb lattice parameter is matched with various ternary and quaternary III-V compounds covering bandgaps from 0.3 eV to 1.58 eV 1 . Consequently, GaSb-based binary and ternary alloys are important candidates for applications in laser diodes with low threshold currents, photodetectors with high quantum efficiencies, high-frequency devices, superlattices with tailored optical characteristics, high efficiency thermophotovoltaic (TPV) devices and booster cells in tandem solar sell arrangements [2][3][4][5][6][7] . These applications have stimulated interest in GaSb for basic research as well as device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

et al. 2013

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Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm -3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm 2 have been observed.

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“…A Sb-based material system is an attractive candidate for several applications to gas sensing, medical diagnostics or military scene projection that require emitters or detectors operating at the NIR (>1.55 lm) [7][8][9][10][11] or the mid-wavelength IR (MWIR) regime (>2 lm). [12][13][14][15][16][17][18][19] Above all, high-performance lasers with low threshold current density (J th ), high modal gain, high characteristic temperature (T 0 ), or high output power have recently been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

Tatebayashi

Jallipalli

Kutty

et al. 2008

Journal of Elec Materi

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We report the device characteristics of GaInSb/AlGaSb quantum well (QW) lasers monolithically grown on GaAs substrates by using an interfacial misfit (IMF) array. The IMF array localized at the GaSb/GaAs interface can accommodate the 7.8% lattice mismatch between GaAs substrates and GaSb buffer layers, resulting in the formation of a GaSb buffer with a very low defect density on GaAs substrates. Top-top and top-bottom metal contact methods are applied to the Ga 0.9 In 0.1 Sb/GaSb QW edge-emitting lasers monolithically grown on GaAs substrates for characterizing current-voltage (I-V) and output power-current (L-I) curves. The potential drop at the IMF array of $0.7 V is elucidated by comparing I-V characteristics with these two contact methods. L-I characteristics and electroluminescence spectra shows room-temperature lasing at 1.83 lm from a 1.25-mm-long top-top contact device containing six-layer Ga 0.9 In 0.1 Sb QWs with a threshold current density (J th ) of 860 kA/cm 2 . This IMF technique will enable a wide range of lasing wavelengths from near-to mid-wavelength infrared regimes on a GaAs platform.

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Temperature Dependence of the Threshold Current of AlGaAsSb/GaSb DH Lasers

Cited by 36 publications

References 0 publications

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

Electrochemical Liquid-Liquid-Solid Deposition of Crystalline Gallium Antimonide

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique

Device Characteristics of GaInSb/AlGaSb Quantum Well Lasers Monolithically Grown on GaAs Substrates by Using an Interfacial Misfit Array

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