An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-Vas well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to compact models. Important developments of related technologies that have had significant impact on large signal modeling such as automated small and large signal network analyzers, wafer probe capability, and harmonic balance simulator software are also discussed.
The trend to higher integration and higher transmission speed challenges modeling engineers to develop accurate device models up to the Gigahertz range. An absolute prerequisite for achieving this goal are reliable measurements, which have to be checked for data consistency and plausibility. This is especially true for RF data, and also for checking and verifying the applied de-embedding techniques. If this is not the case, RF modeling can become quite time consuming, with a lot of guesswork and ad-hoc judgements, and, basically, frustrating and not correct. If, however, the underlying measurements are flawless and consistent, and provided the applied the models are understood well, RF modeling becomes very effective and provides accurate design kits which will satisfy the chip designer's main goal: right the fist time.
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AhstractCurrent high-end inter-processor links ntn hundreds of signals at Gipbit per second d:aa rates over one or two connectors and tens of inches of backplane. Suitable connectors have to fulfill tight crosstalk, reHsction, and attenuation specifications. Accurate c o~e c t~r measurements and models are critical t u the successfill design of the whole link. However, due to high pin count and interdependencies with the hackplane environment connector characterization is still a challenging task. Here, a 50 Ohm single-ended. pin-in-paste prototype connector system tiom ERNI is analyzed in detail. Comprehensive 3D MI-wave EM simulation!: were done and compared t o measurements. Several de-embedding techniques are presented to extract the connector response from the test environment. It will he shown that the connector footprint on the hackplane has a major impact on the overall electrical performance. IntrnductionAs processor cycle times get faster from generation to generation, the cycle time of intt!r-processor links also has to keep pace. This continuing trend requires faster bus 110 circuits and also Faster interconnect technolog!ies. The current challenge is to transmit signals with Gbps data rates across nets ofup to tens of inches on a hackplane. Any significant contributors to signal distonion. attenuation. or crosstalk have to be controlled and minimized.Specific interconnect packaging technologies are required to suppon system performance targets at these data rates. 'This is especially valid for backplane connectors. On one side increased hus widths drive 10 higher si@ densities in the hackplane connector. On the other side signal integrity problems like crosstalk. attenuation. and impedance mismatch have to he hetter controlled. In this regard SMT (Surface Mount Technology) or pin-in-paste COMKIOIS have shown advantages over the more conventional compliant-pin or press-fit connectors. SMT connectors support much smaller card via holes (approx. I2 mil compared to 24 mil drilled) imd allow much more independent design of the backplane via pin field/array under the connector since they do not require the signal contacts to penetrate the board. 'The usage of smaller vias with SMT connectors can significantly reduce overall t:oupling since the signal lines in the connector are typically very well shielded. In addition, via impedance and thus reflection can he better controlled. --Connector Receptacle Test Ca idsFigure I : Backpl.uic ~tui~iector ( m a t e d ) on test cards. The test equipment is 1iiihcll vi:icuax cables to the SMA connectors whichserveas laiiiicli iiito the striplineenvironment oftliecard.The following i~,ipcr dcscribes the electrical characterization of a high-speed c~i~i i~c c t o r system for hackpbane applications. Specifically, a 511 Olim single-ended. fully shielded connector system is analyzed t l i i i t uscs a combined SMT and pin-in-paste solder connection t ,~ tlic hackplane. Challenges of Ilackplane Connector CharacterizalinnKey electrical pcrl;mii;ince parameters of backplane c...
Long range via coupling effects are analysed for connectors with a huge signal count and high speed signals using 3D field calculations. The effect was also verified with time domain measurements. The results are discussed with respect to the impact of long range coupling on signal integrity. IntroductionFor systems with a huge number of signals and tight wiring constraints signal to signal coupling is one of the limiting factors for the system performance. A lot of effort needs to be spent in order to correlate critical bus performance with signal simulations. Especially for large bus systems also parasitic coupling effects need to be taken into account.
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