2015 IEEE MTT-S International Microwave Symposium 2015
DOI: 10.1109/mwsym.2015.7166756
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History and state-of-the-art in large signal modeling for RF/microwave power amplifier development

Abstract: An up-to-date summary of relevant large signal (LS) or nonlinear models for power amplifier design is provided, covering a wide range of device types, along with a brief history for the various categories of models. Addressed are compact LS models for III-Vas well as silicon FETs and bipolar transistors that are suitable for power amplifier design, utilizing a range of technologies including GaN, GaAs, SiGe and CMOS. Behavioral LS models are considered along with trade-offs that often exist as compared to comp… Show more

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Cited by 5 publications
(1 citation statement)
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“…Nonlinear models of microwave devices and circuits [ 14 ] can be categorized either as Compact/Physical (based on the physics governing the device) or Black-Box/Behavioral (based on the characteristics of the device from its terminals) [ 15 ]. When the internal structure of the Device Under Test (DUT) is not disclosed or is of no interest to the system designer, black-box modeling is the most suitable approach, with various alternatives available [ 16 , 17 , 18 , 19 , 20 , 21 ].…”
Section: Introductionmentioning
confidence: 99%
“…Nonlinear models of microwave devices and circuits [ 14 ] can be categorized either as Compact/Physical (based on the physics governing the device) or Black-Box/Behavioral (based on the characteristics of the device from its terminals) [ 15 ]. When the internal structure of the Device Under Test (DUT) is not disclosed or is of no interest to the system designer, black-box modeling is the most suitable approach, with various alternatives available [ 16 , 17 , 18 , 19 , 20 , 21 ].…”
Section: Introductionmentioning
confidence: 99%