Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm-2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
We define the concept of lattice match for any pair of crystal lattices in any given crystal direction, allowing for a periodic reconstruction of the interface. An algorithm for a systematic search for all possible matches is developed, and some examples of nonstandard lattice matches are given for CdTe on GaAs and sapphire to illustrate the method. For the case of CdTe on GaAs, our results agree with published results, both with respect to growth plane and orientation for CdTe(111) on GaAs(100). For CdTe on sapphire, our results agree with published results with respect to growth plane.
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