The major limitations of solution‐processed oxide electronics include high process temperatures and the absence of necessary strain tolerance that would be essential for flexible electronic applications. Here, a combination of low temperature (<100 °C) curable indium oxide nanoparticle ink and a conductive silver nanoink, which are used to fabricate fully‐printed narrow‐channel thin film transistors (TFTs) on polyethylene terephthalate (PET) substrates, is proposed. The metal ink is printed onto the In2O3 nanoparticulate channel to narrow the effective channel lengths down to the thickness of the In2O3 layer and thereby obtain near‐vertical transport across the semiconductor layer. The TFTs thus prepared show On/Off ratio ≈106 and simultaneous maximum current density of 172 µA µm−1. Next, the depletion‐load inverters fabricated on PET substrates demonstrate signal gain >200 and operation frequency >300 kHz at low operation voltage of VDD = 2 V. In addition, the near‐vertical transport across the semiconductor layer is found to be largely strain tolerant with insignificant change in the TFT and inverter performance observed under bending fatigue tests performed down to a bending radius of 1.5 mm, which translates to a strain value of 5%. The devices are also found to be robust against atmospheric exposure when remeasured after a month.
High energy density, flexible supercapacitors typically use various carbon allotropes and 2-dimensional metals as the electrode material. As an alternative, here we report, fully printed, bendable and high-capacity micro-supercapacitors (MSCs)...
Significant developments have also been noted in the printed/flexible electronics domain, where the performance of solution-processed thin film transistors (TFTs) may now easily be compared with their vacuum deposited (e.g. sputtered or pulsed-laser deposited) counterparts. [6] Notably, these solutionprocessed devices are of high interest for a wide range of portable electronic or Internet of Things (IoT) related devices. However, any digital electronic component essentially requires complementary metal oxide semiconductor (CMOS) technology to ensure high noise immunity and low power consumption. [7] Unfortunately, it is only the oxygen deficient n-type oxide semiconductors, the performance of which nearly matches that of polycrystalline silicon, whereas the performance of the p-type materials is substantially lower in comparison. In fact, the problem associated with the absence of matching/comparable p-type oxide semiconductors range beyond the CMOS electronics to other p-n junction devices, for example, solar cells. Here, the transport properties of p-type oxide semiconductors are primarily limited by their highly localized oxygen 2p orbitals in the valence band maximum (VBM), deep VBM, rigorous environmental and fabrication conditions and difficulties in high-quality film formation. [8][9][10][11] It should also be noted that the examples of solutionprocessed p-type oxide semiconductors are essentially limited to NiO, Cu x O, SnO, and delafossite-type CuMO 2 (M = Al and Cr). [8][9][10][11] Among these, Cu x O has been the most promising candidate owing to its high theoretical Hall mobility, non-toxicity, suitable optical properties, and low cost. [12,13] Although it has been a well-known semiconductor even in the pre-silicon era, resurgent interest in Cu 2 O has been spurred when Matsuzaki et al. demonstrated a Hall mobility of 90 cm 2 V −1 s −1 for epitaxial Cu 2 O films on MgO in 2008. [14] The subsequent studies have reported about p-type Cu x O deposition via sputtering, [14] pulsed laser deposition [15,16] and thermal oxidation techniques. [17] Solution-based fabrication techniques involving either spin/spray coating or inkjet printing have also been reported. [15,[18][19][20][21][22][23] However, when it comes to Cu x O-based TFTs, the typical process temperatures (≥400 °C) or reported operating voltages have always been very high. [24][25][26] Oxide semiconductors are becoming the materials of choice for modern-day display industries. The performance of solution-processed oxide thin film transistors (TFTs) has also improved dramatically over the last few years. However, while oxygen deficient n-type semiconductors can demonstrate excellent electronic transport, the performance of p-type materials has remained unsatisfactory. Consequently, only the n-type semiconductor-based pseudo-complementary metal oxide semiconductor (CMOS) technology has attracted tremendous interests recently; yet, the high power dissipation remains a problem. Here, this work demonstrates all-oxide CMOS invertors with high-performa...
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