Optical solitons or solitonlike states shed light to blueshifted frequencies through a resonant emission process. We predict a mechanism by which a second propagating mode is generated. This mode, called negative resonant radiation, originates from the coupling of the soliton mode to the negative-frequency branch of the dispersion relation. Measurements in both bulk media and photonic-crystal fibers confirm our predictions.

Electromagnetic field confinement is crucial for nanophotonic technologies, since it allows for enhancing light–matter interactions, thus enabling light manipulation in deep sub‐wavelength scales. In the terahertz (THz) spectral range, radiation confinement is conventionally achieved with specially designed metallic structures—such as antennas or nanoslits—with large footprints due to the rather long wavelengths of THz radiation. In this context, phonon polaritons—light coupled to lattice vibrations—in van der Waals (vdW) crystals have emerged as a promising solution for controlling light beyond the diffraction limit, as they feature extreme field confinements and low optical losses. However, experimental demonstration of nanoscale‐confined phonon polaritons at THz frequencies has so far remained elusive. Here, it is provided by employing scattering‐type scanning near‐field optical microscopy combined with a free‐electron laser to reveal a range of low‐loss polaritonic excitations at frequencies from 8 to 12 THz in the vdW semiconductor α‐MoO3. In this study, THz polaritons are visualized with: i) in‐plane hyperbolic dispersion, ii) extreme nanoscale field confinement (below λo ⁄75), and iii) long polariton lifetimes, with a lower limit of >2 ps.

GaV4S8 is a multiferroic semiconductor hosting Néel-type magnetic skyrmions dressed with electric polarization. At Ts = 42 K, the compound undergoes a structural phase transition of weakly first-order, from a non-centrosymmetric cubic phase at high temperatures to a polar rhombohedral structure at low temperatures. Below Ts, ferroelectric domains are formed with the electric polarization pointing along any of the four 〈111〉 axes. Although in this material the size and the shape of the ferroelectric-ferroelastic domains may act as important limiting factors in the formation of the Néel-type skyrmion lattice emerging below TC = 13 K, the characteristics of polar domains in GaV4S8 have not been studied yet. Here, we report on the inspection of the local-scale ferroelectric domain distribution in rhombohedral GaV4S8 using low-temperature piezoresponse force microscopy. We observed mechanically and electrically compatible lamellar domain patterns, where the lamellae are aligned parallel to the (100)-type planes with a typical spacing between 100 nm–1.2 μm. Since the magnetic pattern, imaged by atomic force microscopy using a magnetically coated tip, abruptly changes at the domain boundaries, we expect that the control of ferroelectric domain size in polar skyrmion hosts can be exploited for the spatial confinement and manipulation of Néel-type skyrmions.

We demonstrate the imaging of ferroelectric domains in BaTiO3, using an infrared-emitting free-electron laser as a tunable optical source for scattering scanning near-field optical microscopy and spectroscopy. When the laser is tuned into the spectral vicinity of a phonon resonance, ferroelectric domains can be resolved due to the anisotropy of the dielectric properties of the material. Slight detuning of the wavelength gives rise to a contrast reversal clearly evidencing the resonant character of the excitation. The near-field domain contrast shows that the orientation of the dielectric tensor with respect to the sample surface has a clear influence on the near-field signal.

Nano-spectroscopy in the terahertz frequency range remains challenging despite recent technological progress in developing both THz emitter sources and near-field optical microscopy (SNOM). Here, we combine scattering-type SNOM with a free-electron laser light source, to tune into the 1.3–8.5 THz range. A significant portion of this range, namely, the frequencies above ∼3 THz, is not covered by previously reported near-field microscopy systems. However, it constitutes an indispensable regime where many elementary processes in solids including collective lattice excitations, charge, and spin transport occur. Our approach of nano-spectroscopy and nano-imaging provides a versatile analysis of nanostructures as small as 50 nm, hence beating the optical diffraction limit by λ/4600.

Abstract:The Luneburg lens is an aberration-free lens that focuses light from all directions equally well. We fabricated and tested a Luneburg lens in silicon photonics. Such fully-integrated lenses may become the building blocks of compact Fourier optics on chips. Furthermore, our fabrication technique is sufficiently versatile for making perfect imaging devices on silicon platforms.

We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around λ = 20 μm, adjustable by changing the doping concentration. In our experiments, gold stripes below the GaAs superlens are imaged with a λ/6 subwavelength resolution by an apertureless near-field optical microscope utilizing infrared radiation from a free-electron laser. The resonant behavior of the observed superlensing effect is in excellent agreement with simulations based on the Drude-Lorentz model. Our results demonstrate a rather simple superlens implementation for infrared nanospectroscopy.

Plasma waves play an important role in many solid-state phenomena and devices. They also become significant in electronic device structures as the operation frequencies of these devices increase. A prominent example is field-effect transistors (FETs), that witness increased attention for application as rectifying detectors and mixers of electromagnetic waves at gigahertz and terahertz frequencies, where they exhibit very good sensitivity even high above the cutoff frequency defined by the carrier transit time. Transport theory predicts that the coupling of radiation at THz frequencies into the channel of an antenna-coupled FET leads to the development of a gated plasma wave, collectively involving the charge carriers of both the two-dimensional electron gas and the gate electrode. In this paper, we present the first direct visualization of these waves. Employing graphene FETs containing a buried gate electrode, we utilize near-field THz nanoscopy at room temperature to directly probe the envelope function of the electric field amplitude on the exposed graphene sheet and the neighboring antenna regions. Mapping of the field distribution documents that wave injection is unidirectional from the source side since the oscillating electrical potentials on the gate and drain are equalized by capacitive shunting. The plasma waves, excited at 2 THz, are overdamped, and their decay time lies in the range of 25-70 fs. Despite this short decay time, the decay length is rather long, i.e., 0.3-0.5 μm, because of the rather large propagation speed of the plasma waves, which is found to lie in the range of 3.5-7 × 10 6 m/s, in good agreement with theory. The propagation speed depends only weakly on the gate voltage swing and is consistent with the theoretically predicted 1 4 power law.