Anisotropy Contrast in Phonon-Enhanced Apertureless Near-Field Microscopy Using a Free-Electron Laser

Kehr, Susanne C.; Cebula, Marcus; Mieth, O.; Härtling, Thomas; Seidel, Jan; Grafström, S.; Eng, Lukas M.; Winnerl, S.; Stehr, D.; Helm, M.

doi:10.1103/physrevlett.100.256403

Cited by 75 publications

(75 citation statements)

References 30 publications

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“…This contrast reversal is again characteristic for resonant excitation in near-field microscopy when tuning the wavelength over the resonance [34,36]. At this wavelength, the structure is not as clear as in Figure 3c, which is consistent with the mid-IR data, where the difference between the untreated CCP and the 10 −2 M KBX sample is much lower.…”

Section: S-snim Of the Ccpx-2b Sample Applying The Free-electron Lasersupporting

confidence: 79%

Near-Field Optical Examination of Potassium n-Butyl Xanthate/Chalcopyrite Flotation Products

Firkala

Kuschewski²,

Nörenberg³

et al. 2018

Minerals

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Abstract:The present study introduces scattering-type scanning near-field infrared optical nanospectroscopy (s-SNIM) as a valuable and well-suited tool for spectrally fingerprinting n-butyl xanthate (KBX) molecules adsorbed to chalcopyrite (CCP) sample surfaces. The collector KBX is well known to float CCP and is used in beneficiation. We thus identified KBX reaction products both by IR optical far-and near-field techniques, applying attenuated total internal reflection Fourier-transform infrared spectroscopy (ATR FT-IR) in comparison to s-SNIM, respectively. The major KBX band around 880 cm −1 was probed in s-SNIM using both the tunable free-electron laser FELBE at the Helmholtz-Zentrum Dresden-Rossendorf facility, Germany, and table-top CO 2 laser illumination. We then were able to monitor the KBX agglomeration in patches <500 nm in diameter at the CCP surface, as well as nanospectroscopically identify the presence of KBX reaction products down to the 10 −4 M concentration.

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Section: S-snim Of the Ccpx-2b Sample Applying The Free-electron Lasersupporting

confidence: 79%

Near-Field Optical Examination of Potassium n-Butyl Xanthate/Chalcopyrite Flotation Products

Firkala

Kuschewski²,

Nörenberg³

et al. 2018

Minerals

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“…Under optimized conditions the illuminated tip acts as an antenna that confines the incident electric field around the tip-apex, thus providing a nanoscale light source for high-resolution imaging. Depending on the wavelength of the incident photons and by analyzing the scattered light with a spectrometer system, sample properties in the visible [9][10][11][12][13][14][15], IR [16][17][18][19][20], and THz [21][22][23][24][25][26] regime can be investigated with the additional benefit of a significantly improved spatial resolution. For wavelengths in the IR regime this technique has already been applied to many different sample systems, e.g.…”

Section: Introductionmentioning

confidence: 99%

Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Hermann¹,

Hoehl²,

Ulrich³

et al. 2014

Opt. Express

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Abstract:We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of nearfield spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO 2 , SiC, Si x N y , and TiO 2 . ©2014 Optical Society of AmericaOCIS codes: (120.0120) Instrumentation, measurement, and metrology; (180.4243) Near-field microscopy; (240.0240) Optics at surfaces; (300.0300) Spectroscopy; (310.6860) Thin films, optical properties. 1248-1262 (2014). 5. S. Kawata and Y. Inouye, "Scanning probe optical microscopy using a metallic probe tip," Ultramicroscopy 57(2-3), 313-317 (1995). 6. F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, "Scanning interferometric apertureless microscopy: References and linksOptical imaging at 10 angstrom resolution," Science 269(5227), 1083-1085 (1995). 7. R. Bachelot, P. Gleyzes, and A. C. Boccara, "Near-field optical microscope based on local perturbation of a diffraction spot," Opt. Lett. 20(18), 1924-1926 (1995). 8. B. Knoll and F. Keilmann, "Near-field probing of vibrational absorption for chemical microscopy," Nature 399(6732), 134-137 (1999 Helm, "Anisotropy contrast in phonon-enhanced apertureless near-field microscopy using a free-electron laser," Phys. Rev. Lett.

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“…Very recently ferroelectric domains in BaTiO 3 have been imaged (Fig. 10) with contrast due to the anisotropy of the dielectric properties of the material [67]. Slight detuning of the wavelength from the phonon resonance at 17µm gave rise to a contrast reversal giving clear evidence of the resonant character of the excitation.…”

Section: Phonon-enhanced Scattering Scanning Near-field Optical MImentioning

confidence: 98%

Far-infrared free-electron lasers and their applications

Murdin

2009

Contemporary Physics

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Free electron lasers based on radio-frequency linear accelerators provide an important source of farinfrared radiation which allow exciting experiments that cannot be performed in any other way. Facilities such as FELIX (Nieuwegein, The Netherlands), JFEL (Newport News VA, USA), FELBE (Dresden, Germany), CLIO (Paris, France) and others provide mid-and far-infrared output in picoseconds pulses with micro-joules of energy. They give continuous, wide tuning in far-IR for resonant pumping of discrete transitions (with simultaneous coverage of mid-IR) from around 3 to 250 µm wavelength. This enables time-resolved spectroscopy, non-linear optics and spectroscopy of weak absorptions. They have been applied to a wide variety of problems in condensed matter physics, physical chemistry and biophysics. We review the physics applications of these sources. Far-infrared Free-Electron Lasers and their output characteristicsThe technology of 4 th generation light sources, or free-electron lasers (FELs), pumped by radiofrequency linear accelerators (r.f. linacs) is mature enough to have enabled well established user facilities that provide thousands of hours of beam-time per year. The typical engineering constraints put the wavelength of these sources in the mid-to far-infrared wavelength, or THz frequency, range of the spectrum. This wavelength range is relatively poorly covered by other source types, and the combination of output characteristics is unique, and allows a range of experiment types that cannot be performed by other means. The output may give (as exemplified by the FELIX laser in Nieuwegein, the Netherlands):o Continuous and easy tuning over a wide range of wavelengths in a matter of seconds without beam steering o high pulse power for non-linear optics in the megawatt range; o short pulses for picosecond dynamics (of order 10-1000 optical cycles); o controllable repetition rate of the micropulse (from single pulses up to order 1 GHz); o coherent (band-width limited) pulses of controllable length/bandwidth (width typically from 1-10%). We explain briefly (and highly schematically) the operating principles of the r.f. linac pumped FEL, in order to explain how these characteristics come about, and how they are controlled. For a recent review of the physics and output characteristics see [1].In the FEL a relativistic beam of electrons produced by the accelerator is injected into an optical cavity, containing an undulator. The undulator is a periodic magnetic field perpendicular to the direction of the electron beam of alternating polarity, that causes a periodic deflection of the electrons as shown in Fig 1. The transverse motion in the inertial frame travelling down the undulator with the longitudinal speed of the electron bunch is analogous to the oscillatory motion of electrons in a stationary dipole antenna and hence results in the emission of radiation with a frequency equal to the oscillation frequency. In this inertial frame the undulator period is length contracted, and the emitted radiation when view...

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Anisotropy Contrast in Phonon-Enhanced Apertureless Near-Field Microscopy Using a Free-Electron Laser

Cited by 75 publications

References 30 publications

Near-Field Optical Examination of Potassium n-Butyl Xanthate/Chalcopyrite Flotation Products

Near-Field Optical Examination of Potassium n-Butyl Xanthate/Chalcopyrite Flotation Products

Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Far-infrared free-electron lasers and their applications

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