Kesterite materials (Cu2ZnSn(S,Se)4) are made from non‐toxic, earth‐abundant and low‐cost raw materials. We summarise here the structural and electronic material data relevant for the solar cells. The equilibrium structure of both Cu2ZnSnS4 and Cu2ZnSnSe4 is the kesterite structure. However, the stannite structure has only a slightly lower binding energy. Because the band gap of the stannite is predicted to be about 100 meV lower than the kesterite band gap, any admixture of stannite will hurt the solar cells. The band gaps of Cu2ZnSnS4 and Cu2ZnSnSe4 are 1.5 and 1.0 eV, respectively. Hardly any experiments on defects are available. Theoretically, the CuZn antisite acceptor is predicted as the most probable defect. The existence region of the kesterite phase is smaller compared with that of chalcopyrites. This makes secondary phases a serious challenge in the development of solar cells. Copyright © 2012 John Wiley & Sons, Ltd.

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The efficiency of kesterite-based solar cells is limited by various non-ideal recombination paths, amongst others by a high density of defect states and by the presence of binary or ternary secondary phases within the absorber layer. Pronounced compositional variations and secondary phase segregation are indeed typical features of non-stoichiometric kesterite materials. Certainly kesterite-based thin film solar cells with an offstoichiometric absorber layer composition, especially Cu-poor/Zn-rich, achieved the highest efficiencies, but deviations from the stoichiometric composition lead to the formation of intrinsic point defects (vacancies, anti-sites, and interstitials) in the kesterite-type material. In addition, a non-stoichiometric composition is usually associated with the formation of an undesirable side phase (secondary phases). Thus the correlation between off-stoichiometry and intrinsic point defects as well as the identification and quantification of secondary phases and compositional fluctuations in non-stoichiometric kesterite materials is of great importance for the understanding and rational design of solar cell devices. This paper summarizes the latest achievements in the investigation of identification and quantification of intrinsic point defects, compositional fluctuations, and secondary phases in non-stoichiometric kesterite-type materials.This work focuses on structural variations in kesterite-type compound semiconductors, in particular Cu/Zn disorder and intrinsic point defects, as well as on compositional variations, in particular stoichiometry deviations in the kesterite-type phase and the segregation of related binary and ternary phases.This review provides the vital approaches by discussing results and trends concerning intrinsic point defects and structural disorder, compositional fluctuations, and secondary phases on a macroscopic and microscopic scale and even on the nano-scale. Various analytical methods have been used in these studies.The review comprises five parts:A. Crystal structure, structural disorder, and intrinsic point defects in kesterites B. Raman spectroscopy investigations on kesterites OPEN ACCESS RECEIVED

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Secondary phases in Cu2ZnSnS4 (CZTS) are investigated by x-ray absorption spectroscopy. Evaluating the x-ray absorption near edge structure at the sulfur K-edge, we show that secondary phases exhibit sufficiently distinct features to allow their quantitative determination with high accuracy. We are able to quantify the ZnS fraction with an absolute accuracy of ±3%, by applying linear combination analysis using reference spectra. We find that even in CZTS thin films with [Sn]/[Zn] ≈ 1, a significant amount of ZnS can be present. A strong correlation of the ZnS-content with the degradation of the electrical performance of solar cells is observed.

Solar cells based on kesterite-type Cu 2 ZnSnS 4 (CZTS) were fabricated on molybdenum coated soda lime glass by evaporation using ZnS, Sn, Cu, and S sources. The coevaporation process was performed at a nominal substrate temperature of 5508C and at a sulfur partial pressure of 2-3 Â 10 À3 Pa leading to polycrystalline CZTS thin films with promising electronic properties. The CZTS absorber layers were grown copper-rich, requiring a KCN etch step to remove excess copper sulfide. The compositional ratios as determined by energy-dispersive X-ray spectroscopy (EDX) after the KCN etch are Cu/(Zn þ Sn): 1.0 and Zn/Sn: 1.0. A solar cell with an efficiency of 4.1% and an open-circuit voltage of 541 mV was obtained.

The phase diagram elucidates structural changes and phase separation effects, induced by halide substitution in hybrid perovskite MAPb(I,Br)3 solid solution.