We report on a TFT degradation encountered in short channel a-IGZO TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.Index Terms-amorphous InGaZnO (a-IGZO), thin-film transistor, self-heating effect, hot carrier effect, density of states. 0741-3106 (c)
We report on an abnormal output characteristics in p-type low temperature polycrystalline silicon thin-film transistors fabricated on polyimide (PI); negative differential conductance behavior is often observed in saturation region of drain current from large width devices. To understand such abnormal output characteristics, device dimension dependence was studied in a systematic way. As a result, we found that enhanced self-heating is mainly responsible originating from the poor thermal conductivity of PI substrate. A related degradation model is also proposed.INDEX TERMS Thin-film transistor (TFT), LTPS, self-heating effect, hot carrier effect, polyimide (PI), flexible.
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