High purity ZnSe epilayers grown by atmospheric double zone metalorganic atomic layer epitaxy

Influence of thickness on the microstructural, optoelectronic and morphological properties of nanocrystalline ZnSe thin films

“…The advantages of using ZnSe over CdS include its non-toxicity, its wider energy band gap than CdS, and its ability to provide a better lattice matching with CIGS absorber layer. ZnSe film has been prepared by various growth techniques, such as molecular beam epitaxy (MBE) [6], metalorganic chemical vapour deposition (MOCVD) [7], atomic layer epitaxy (ALE) [8], electro-deposition [9], chemical bath deposition [10], photochemical [11], spray pyrolysis [12], and thermal evaporation [13]. In addition, advances in low temperature epitaxial growth techniques such as MBE and MOCVD have been used to obtain high quality II-VI compound semiconductor films.…”

Effect of annealing temperature on the structural and optical properties of Ge15Se75Zn10 thin films

“…There are different growth techniques used to prepare thin films, for example atomic layer epitaxy (ALE), molecular beam epitaxy (MBE), organo-metallic chemical vapour deposition (OMCVD), thermal evaporation under vacuum, solution growth spray pyrolysis etc. [45][46][47][48]. In this study, a vacuum evaporation technique was used to prepare Ge-Se-Zn thin films due to its simplicity, low cost, reproducibility and convenience for producing high-quality film [49,50].…”

Influence of substrate temperature on the properties of electron beam evaporated ZnSe films

“…ZnSe film has been prepared by various growth techniques, such as molecular beam epitaxy (MBE) [4], metalorganic chemical vapour deposition (MOCVD) [5], atomic layer epitaxy (ALE) [6], electro-deposition [7], chemical bath deposition [8], photochemical [9], spray pyrolysis [10], and thermal evaporation [11]. In addition, advances in low temperature epitaxial growth techniques such as MBE and MOCVD had been demonstrated to achieve high quality II-VI compound semiconductor films.…”