Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Lee, Seok‐Woo; Jeon, Pyo Jin; Choi, Kyoung Hwan; Min, Sung-Wook; Kwon, Hyeokjae; Im, Seongil

doi:10.1109/led.2015.2411742

Cited by 21 publications

(7 citation statements)

References 10 publications

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“…5,8,13) In TAOS-TFTs, many researchers predicted the existence of hot carriers as one of the degradation models of device reliability from transfer characteristics and capacitancevoltage (C-V ) characteristics. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34] However, it is a discussion point as to whether the generation of hot carriers is possible or not because TAOS such as IGZO have an amorphous structure and exhibit relatively low mobility of around 10 cm 2 V −1 s −1 compared with poly-Si or sc-Si. When hot carriers are generated in TAOS-TFTs, photon emission should be observed.…”

mentioning

confidence: 99%

Hot carrier effects in InGaZnO thin-film transistor

Takahashi

Miyanaga

Fujii

et al. 2019

Appl. Phys. Express

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Photon emission and the electrical characteristics of a InGaZnO (IGZO) thin-film transistor (TFT) were evaluated to clarify the existence of hot carriers and their effects. The photon emission was observed from the drain edge of the IGZO-TFT and the capacitance–voltage characteristics indicated that a potential barrier was formed at the drain region when the device is driven by high drain voltage of 30 V. Based on these results, the photon emission phenomenon from the IGZO-TFT was induced by hot carriers that should be considered as a significant degradation mode for a high-performance oxide semiconductor device.

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confidence: 99%

Hot carrier effects in InGaZnO thin-film transistor

Takahashi

Miyanaga

Fujii

et al. 2019

Appl. Phys. Express

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“…Moreover, the power of Stage-Ⅱ exceeds 15 mW, higher than the required SH-activated power [8] . Such SH-induced channel carriers are often ascribed to the heat-driven external dopants (e.g., hydrogen) from the doped S/D [9,15] or the thermal induction of shallow-donor defects from deep states (e.g., oxygen vacancy V O ) [10,22] . Considering the n + a-IGZO S/D in this work is formed by Ar plasma rather than doped with external donors, the SH effect in Stage-Ⅱ most plausibly turns the deep-state Vo into the shallow-donor Vo in the a-IGZO chan- nel [10,14] , as illustrated in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Besides the superior switching characteristics, the high-current driving capability of AOS TFTs is increasingly demanded by advanced applications, such as the gate driver on the array (GOA), electroluminescence, and micro-LED displays [5−7] . So far, the AOS TFTs under high current stresses (HCSs) have encountered complicated severe degradation behaviors, such as threshold voltage (V th ) shift [8] , abnormal hump [9,10] , subthreshold swing (SS) deterioration [11] , and even hard breakdown [12] .…”

Section: Introductionmentioning

confidence: 99%

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Wang,

Li,

Liu

et al. 2023

J. Semicond.

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As growing applications demand higher driving currents of oxide semiconductor thin-film transistors (TFTs), severe instabilities and even hard breakdown under high-current stress (HCS) become critical challenges. In this work, the triggering voltage of HCS-induced self-heating (SH) degradation is defined in the output characteristics of amorphous indium-gallium-zinc oxide (a-IGZO) TFTs, and used to quantitatively evaluate the thermal generation process of channel donor defects. The fluorinated a-IGZO (a-IGZO:F) was adopted to effectively retard the triggering of the self-heating (SH) effect, and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F. The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

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“…Shortchannel (up to 1 µm), high-frequency TFTs need to operate very close to their threshold voltage and are typically characterised and operated at a maximum V DS ≤ 2 V [28,93]. This is due to the degradation of the channel caused by hot-carrier effects and selfheating, which becomes more severe as the length of the channel decreases [101]. Because of this, highpower TFTs for applications such as audio amplifiers require larger channel lengths of tens of micrometers to withstand large voltages and currents, at the expense of a considerably lower operation frequency [98].…”

Section: Flexible Metal Oxide Tftsmentioning

confidence: 99%

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

Cantarella

Costa

Meister

et al. 2020

Flex. Print. Electron.

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Thanks to the extraordinary advances flexible electronics have experienced over the last decades, applications such as conformable active-matrix displays, ubiquitously integrated disposable flexible sensor nodes, wearable or textile-integrated systems, as well as imperceptible and transient implants are now reachable. To enable these applications, specialized analog circuits able to transmit and receive data, condition sensors' parameters, drive actuators or control powering devices are required. High-performance sensor conditioning, driving and transceiver circuits on a wide range of flexible substrates are therefore extremely important to develop. However, the currently available materials and processes compatible with mechanically flexible substrates impose massive limitations in terms of large-area uniformity, device dimensions' shrinkability and circuit design, challenging the realization of flexible analog systems. Among state-of-the-art technologies employing low-temperature fabrication processes, thin-film transistors (TFTs) based on metal oxide semiconductors represent the potentially best compromise in terms of prize, performance, technology maturity and capacity to realize complex systems. This is why metal oxide TFTs are nowadays widely used for flexible, light-weight, transparent, stretchable and bio-degradable analog circuits and systems. Here, we review the current trends of flexible metal oxide TFTs for analog applications. First, an introduction is given, where current challenges and requirements related to the realization of flexible analog circuits and systems are analysed. Additionally, TFT performance parameters and configurations are briefly revised. Then, the recent advances in the field of flexible metal oxide TFTs for analog applications are summarized. In particular, all reported approaches to reduce the channel length and improve the AC performance are shown. Next, the current state of flexible metal oxide TFT-based analog circuits is shown, discussing n-type only and complementary circuit configurations. The last topic of the review covers systems based on flexible metal oxide analog circuits. Finally, a conclusion is drawn and an outlook over the field is provided.

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Analysis of Self-Heating Effect on Short Channel Amorphous InGaZnO Thin-Film Transistors

Cited by 21 publications

References 10 publications

Hot carrier effects in InGaZnO thin-film transistor

Hot carrier effects in InGaZnO thin-film transistor

Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

Review of recent trends in flexible metal oxide thin-film transistors for analog applications

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