Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

Kim, Jinhwan; Ji, Jae-Hoon; Min, Sung-Wook; Jo, Gaehun; Jung, Min-Cherl; Park, Min-Jae; Lee, Sang-Kwon; Koh, Jung‐Hyuk

doi:10.1016/j.ceramint.2016.12.063

Cited by 21 publications

(6 citation statements)

References 22 publications

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“…Additionally, and for the purpose of this review, we are interested in the thermal effects induced upon LA, thus we are focusing our attention to the ns pulse regime; nevertheless. Nevertheless, the utilization of ps, fs, and CW lasers for metal‐oxide film processing is additionally reported. It is, therefore, worth addressing the connection between CW and pulsed LA, as a scanning CW process shares similar principles with pulsed LA albeit with significantly lower peak power, defined by the scanning speed and laser spot size rendering a ms interaction with the film (in contrast to the typical ns pulses provided by excimer lasers).…”

Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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(1 of 37)high mobility (µ) (even in amorphous phase), wide bandgap (transparent in the visible range), and the ability to be controllably doped. Importantly, they can be grown into thin films and various nanostructures with different scalable deposition techniques, including vacuum-based methods such as physical vapor deposition (PVD) [7,8] and chemical vapor deposition (CVD) [9] as well as solution-based processes such as spray [10] and spin coating. [11] Moreover, the resulting layers can be easily patterned using standard fabrication procedures and as such can be integrated into state-of-the-art processes for (opto)electronic applications. The above-mentioned capabilities have led to a plethora of applications such as switching backplanes for displays, transparent and flexible electronics, integrated circuits (ICs), photovoltaics (PVs), organic light-emitting diodes (OLEDs), capacitors, batteries, photocatalytic devices, electrochromics and memory devices, to name but a few. [8,[12][13][14] Because of their ability to be doped, their electronic properties can be tuned from dielectrics to semiconductors and conductors. This characteristic versatility has recently been exploited to stretch the range of their applications to new technological sectors, such as plasmonics in the near infrared and midinfrared spectral ranges. [12,15] One of the driving applications of metal oxides is in thinfilm transistors (TFTs) for large area electronics such as current driven optical displays and ICs. Following the early demonstrations, [16] most effort focused on the fabrication and processing of metal oxides TFTs paying particular attention to the device performance and applications. [1,5,6,17] Especially when processed over large areas, as in the case for display applications, the complexity to precisely control the device reliability and reproducibility becomes a challenging aspect of any TFT technology. To that respect, solution-based techniques progressed rapidly due to their lower cost and higher throughput compared to vacuum-based techniques. In both cases, the metal-oxide deposition has so far been limited to high processing temperatures (>250 °C) (Figure 1a) which renders the technology incompatible with inexpensive, temperature-sensitive substrates such as polymers, the material class of choice for various high throughput manufacturing techniques such as roll-to-roll (R2R) and sheet-to-sheet (S2S)Over the past few decades, significant progress has been made in the field of photonic processing of electronic materials using a variety of light sources. Several of these technologies have now been exploited in conjunction with emerging electronic materials as alternatives to conventional hightemperature thermal annealing, offering rapid manufacturing times and compatibility with temperature-sensitive substrate materials among other potential advantages. Herein, recent advances in photonic processing paradigms of metal-oxide thin-film transistors (TFTs) are presented with particular emphasis on the use of various light sour...

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Section: Laser Annealingmentioning

confidence: 99%

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Yarali

Koutsiaki

Faber

et al. 2019

Adv Funct Materials

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“…J. Kim et al showed that the UV irradiation can improve structural properties significantly as well [23]. A. C. Marques et al investigated the power output density of AZO thin films under UV light and found it to be increased during exposure of the films to UV-light, due to the photo-thermoelectric effect [24].…”

Section: Introductionmentioning

confidence: 99%

“…J. Kim et al. showed that the UV irradiation can improve structural properties significantly as well [ 23 ]. A. C. Marques et al.…”

Section: Introductionmentioning

confidence: 99%

UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties

Khan

Neha

Billah

2022

Heliyon

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Thin films of transparent conductive Al doped ZnO (AZO) thin films were produced via sol-gel spin coating route. Structural, optical, and electrical properties were explored for several dopant concentrations. Formation of crystalline AZO was verified by X-ray Diffraction (XRD) Analysis and structural analysis were carried out later from the XRD data. Highest band gap of 3.67 eV was found for 2 mol % AZO thin films. The average transmittance was found to be 84.19% in the visible spectra for the corresponding thin films. 2 mol% AZO also exhibited a minimum resistivity of 2.05 Ω-cm with a maximum value of figure of merit. Prolonged UV irradiation was applied to 2 mol % AZO thin films prior to annealing. It significantly modified the surface morphology of the film and provided shielding near UVA (315-378 nm) spectrum. This also enhanced the conductivity of the thin film by 3fold compared to non-UV treated sample and decreased optical band gap significantly.

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“…Moreover, during the RTA process, nitrogen release from the ZnO:N layer is less probable. It has been shown that the RTA method is a particularly suitable method for improving the structural, optical, and electrical properties of ZnO films [ 21 , 22 ].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

et al. 2021

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Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectroscopic analyses showed that introduction of N into the ZnO matrix generated defects related to oxygen and zinc vacancies and interstitials. These defects were deep levels which contributed to the electron transport properties of the ZnO:N films, studied by analyzing the current–voltage characteristics of metal–insulator–semiconductor structures with ZnO:N films, measured at 298 and 77 K. At the appliedtechnological conditions of deposition and subsequent RTA at 400 °C n-type ZnO:N films were formed, while RTA at 550 °C transformed the n-ZnO:N films to p-ZnO:N ones. The charge transport in both types of ZnO:N films was carried out via deep levels in the ZnO energy gap. The density of the deep levels was in the order of 1019 cm−3. In the temperature range of 77–298 K, the electron transport mechanism in the ZnO:N films was predominantly intertrap tunneling, but thermally activated hopping also took place.

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Enhanced conductance properties of UV laser/RTA annealed Al-doped ZnO thin films

Cited by 21 publications

References 22 publications

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

Recent Progress in Photonic Processing of Metal‐Oxide Transistors

UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties

Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

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