Study on characterizing fluorocarbon polymer films deposited on an inner surface during high-aspect-ratio contact hole etching using secondary ion mass spectroscopy J. Vac. Sci. Technol. B 17, 355 (1999); 10.1116/1.590563 X-ray photoelectron spectroscopy analyses of metal stacks etched in Cl 2 / BCl 3 high density plasmas
An etching profile distortion called a “notch” was observed in Al alloy etching using inductively coupled plasma and electron cyclotron resonance plasma etcher. Mechanisms of notch formation and reduction were discussed. Electron charge up and the lowered electrical potential of the specific patterns are the reasons for the notch occurrence. Notches are smaller at the Al/Ti(O)N stacked structure. A new etching method is proposed for eliminating notches and achieving high selectivity employing an ICP etcher.
IO Sanwa-cho, Hamamntsu, Shizuoka 435-0038, JapanThe effects of the etching gas chemistry, the rf bias frequency and the ECR position in the pattern-dependent charging were studied using an ECR plasma etch tool. Lowering the rf bias frequency and/or employing the gas chemistry containing an element with small mass such as hydrogen reduced electron shading damage and notching. Notching was suppressed by increasing the distance between an ECR point and a wafer.Furthermore, it is effective to employ the etching gas that contains the elements with small atomic weight for reducing the electron shading damage by using continuous wave (CW) high-density plasmas.
We found that the selectivity between TiN and poly-Si film was high enough in Cl2/O2 plasma to use TiN as an etching mask for poly-Si gate etching. We also discovered that the oxidation of the TiN surface is the reason why TiN serves as an etching mask in poly-Si etching using Cl2/O2 plasma. By using a TiN hard mask in conjunction with a thin photoresist, we were able to reduce electron shading damage. The low aspect ratio of the space of a line-and-space (L&S) pattern is the major reason for the reduction in electron shading damage in this TiN mask process. A portion of the TiN surface on which no charge up occurs is exposed to the plasma during the overetch step because photoresist is eroded by ion bombardment. This is an another reason for the reduced electron shading damage.
Good quality Al/SiN x :H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method Dry etch damage in GaAs metal-semiconductor field-effect transistors exposed to inductively coupled plasma and electron cyclotron resonance Ar plasmas J. Vac. Sci. Technol. B 15, 983 (1997); 10.1116/1.589518Effect of plasma polymerization film on reducing damage of reactive ion etched silicon substrates with CHF3+O2 plasmas J.This study proposes a new metal etching method for reducing electron shading damage using an inductively coupled plasma ͑ICP͒ etcher. Electron shading damage is caused by the same mechanism as in ''notch'' formation. Namely, negative charge-up of the sidewall of the photoresist by electrons due to the difference between electron and ion motion in the plasmas. We can therefore assume that an etching process with no notch will have low electron shading damage. The notch-free overetching process using low inductive power in an ICP etcher was found to have low and uniform electron shading damage. We also present an evaluation method for electron shading damage using a metal-nitride-oxide-silicon capacitor with a comblike antenna.
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