Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma

Tabara, Suguru

doi:10.1143/jjap.35.2456

Cited by 18 publications

(4 citation statements)

References 2 publications

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“…As shown in Fig. 4,24 The charging model 2 alone cannot explain these results as sidewall passivation is not included in the modeling. Sidewall passivation is commonly observed in high-density plasma etching systems.…”

Section: Resultsmentioning

confidence: 99%

Notch formation by stress enhanced spontaneous etching of polysilicon

Chang

Sawin

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Role of cyclic process in the initial stage of diamond deposition during bias enhanced nucleation J. Appl. Phys. 91, 9752 (2002); 10.1063/1.1480116Intrinsic stress, island coalescence, and surface roughness during the growth of polycrystalline films Notch formation during overetching of polysilicon is shown to be caused by stress enhanced spontaneous etching in part, and is not solely a result of feature charging. Notch formation in plasma etching is the lateral etching at the polysilicon-oxide interface that occurs during overetching. In the literature, notching has been attributed to solely charging within the feature. In this work, it is shown that the fields necessary for ion bombardment deflection alone to form a notch are too large to be sustained by an oxide surface. Stress at the polysilicon-oxide interface can induce spontaneous etching of the polysilicon, contributing to the formation of a notch. The effect of stress on spontaneous etching was demonstrated by applying mechanical stress to patterned polysilicon samples taken from the same wafer and observing the changes in notch formation.

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Section: Resultsmentioning

confidence: 99%

Notch formation by stress enhanced spontaneous etching of polysilicon

Chang

Sawin

2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…In reality, in our previous work, 9,10 we found that notching occurred at metal line-and-space dimensions of 1 m and 0.8 m and demonstrated experimentally that notches were caused by the same mechanism for notch occurrence in poly-Si etching. We also found that charging damage from electron shading effect occurred at the metal-oxidesemiconductor ͑MOS͒ transistors with a comblike (line/spaceϭ1/1 m) antenna.…”

Section: Introductionmentioning

confidence: 59%

Study of the influence of gas chemistry on notching in metal etching

Tabara¹

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The observations indicate that feature charging is the a͒ Electronic mail: ayon@mtl.mit.edu main mechanism for explaining the footing effect, [1][2][3]5 and that the charging potential of etched features on a wafer is influenced by their electrical connection. 4,10-12 Thus, for a given trench width, different notch depths can be expected across a wafer on features charging at different potentials.…”

Section: Introductionmentioning

confidence: 99%

Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology

Ayón

Ishihara

Braff

et al. 1999

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The footing or notching effect arises during the dry overetching of silicon layers on top of dielectric films. The visible consequence of this effect is the resulting etch that propagates along the interface between the underlying dielectric films and the silicon layer. Footing is usually considered an undesirable artifact during etching. Thus, the vast majority of efforts made to date have been oriented towards reducing or eliminating the aforementioned effect. There is, however, another alternative that has not been fully exploited: the application of the notching effect in the microfabrication of released structures. Furthermore, with deep reactive ion etching ͑DRIE͒ tools it is also feasible to deposit fluorocarbon films for electrical isolation purposes in situ. Thus, it is possible to microfabricate suspended structures by combining the footing effect with the capabilities offered by DRIE. For this purpose, we have developed, built, and tested suspended electrostatic actuators applying this new microfabrication scheme. The process is well suited for applications involving silicon-on-insulator wafers. Electrostatic actuators microfabricated with this passivation film subsequently underwent 10 5 pull-in cycles without failure.

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Notch Profile Defect in Aluminum Alloy Etching Using High-Density Plasma

Cited by 18 publications

References 2 publications

Notch formation by stress enhanced spontaneous etching of polysilicon

Notch formation by stress enhanced spontaneous etching of polysilicon

Study of the influence of gas chemistry on notching in metal etching

Microfabrication and testing of suspended structures compatible with silicon-on-insulator technology

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