Three-dimensional (3D) silicon integration of active devices with through-silicon vias (TSVs), thinned silicon, and silicon-to-silicon fine-pitch interconnections offers many product benefits. Advantages of these emerging 3D silicon integration technologies can include the following: power efficiency, performance enhancements, significant product miniaturization, cost reduction, and modular design for improved time to market. IBM research activities are aimed at providing design rules, structures, and processes that make 3D technology manufacturable for chips used in actual products on the basis of data from test-vehicle (i.e., prototype) design, fabrication, and characterization demonstrations. Three-dimensional integration can be applied to a wide range of interconnection densities (,10/cm 2 to 10 8 /cm 2 ), requiring new architectures for product optimization and multiple options for fabrication. Demonstration test structures, which are designed, fabricated, and characterized, are used to generate experimental data, establish models and design guidelines, and help define processes for future product consideration. This paper 1) reviews technology integration from a historical perspective, 2) describes industry-wide progress in 3D technology with examples of TSV and silicon-silicon interconnection advancement over the last 10 years, 3) highlights 3D technology from IBM, including demonstration test vehicles used to develop ground rules, collect data, and evaluate reliability, and 4) provides examples of 3D emerging industry product applications that could create marketable systems.

System-on-Package (SOP) technology based on silicon carriers has the potential to provide modular design flexibility and highperformance integration of heterogeneous chip technologies and to support robust chip manufacturing with high-yield/low-cost chips for a wide range of two-and three-dimensional product applications. Key technology enablers include silicon through-vias, high-density wiring, high-I/O chip interconnection, and supporting test and assembly technologies. The silicon through-vias are a key feature permitting efficient area array signal, power, and ground interconnection through these thinned silicon packages. Highdensity wiring and high-density chip I/O interconnection can enable tight integration of heterogeneous chip technologies which approximate the performance of an integrated system-on-chip with a ''virtual chip'' using the silicon package for integration. Silicon carrier fabrication leverages existing manufacturing capability and mid-UV lithography to provide very dense package wiring following CMOS back-end-of-line design rules. Further, the thermal expansion of the silicon carrier package matches the chip, which helps maintain reliability even as the high-density chip microbump interconnections scale to smaller size. In addition to heterogeneous chip integration, SOP products may leverage the integration of passive components, active devices, and electrooptic structures to enhance system-level performance while also maintaining functional test capability and known good chips when needed. This paper describes the technical challenges and recent progress made in the development of silicon carrier technology for potential new applications.

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Data center equipment almost always represents a high expenditure capital investment to the customer, and is often operated without any down time. Data com equipment is typically designed to operate at a rack air inlet temperature of between 10 and 35°C, and a violation of this specification can diminish electronic device reliability and even lead to failure in the field. Thus, it is of paramount importance, from a reliability perspective, to sufficiently understand these systems. A representative non-raised floor data center system was numerically modeled and the data generated from a parametric study was analyzed. The model constitutes a half symmetry section of a 40 rack data center that is arranged in a cold aisle-hot aisle fashion. The effect of several input variables, namely, rack heat load, rack flow rate, rack temperature rise, diffuser flow rate, diffuser location, diffuser height, diffuser pitch, ceiling height, hot exhaust air return vent location, and non-uniformity in rack heat load, was studied. Temperature data was collected at several locations at the inlet to the racks. Statistical analysis was carried out to describe trends in the data.