The wavelength scale confinement of light offered by photonic crystal (PhC) cavities is one of the fundamental features on which many important on-chip photonic components are based, opening silicon photonics to a wide range of applications from telecommunications to sensing. This trapping of light in a small space also greatly enhances optical nonlinearities and many potential applications build on these enhanced light-matter interactions. In order to use PhCs effectively for this purpose it is necessary to fully understand the nonlinear dynamics underlying PhC resonators. In this work, we derive a first principles thermal model outlining the nonlinear dynamics of optically pumped silicon two-dimensional (2D) PhC cavities by calculating the temperature distribution in the system in both time and space. We demonstrate that our model matches experimental results well and use it to describe the behavior of different types of PhC cavity designs. Thus, we demonstrate the model's capability to predict thermal nonlinearities of arbitrary 2D PhC microcavities in any material, only by substituting the appropriate physical constants. This renders the model critical for the development of nonlinear optical devices prior to fabrication and characterization.

In this paper, we show the experimental results of a thermally stable SiN external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of SiN Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.

Controlling the optical response of a medium through suitably tuned coherent electromagnetic fields is highly relevant in a number of potential applications, from all-optical modulators to optical storage devices. In particular, electromagnetically induced transparency (EIT) is an established phenomenon in which destructive quantum interference creates a transparency window over a narrow spectral range around an absorption line, which, in turn, allows to slow and ultimately stop light due to the anomalous refractive index dispersion. Here we report on the observation of a new form of both induced transparency and amplification of a weak probe beam in a strongly driven silicon photonic crystal resonator at room temperature. The effect is based on the oscillating temperature field induced in a nonlinear optical cavity, and it reproduces many of the key features of EIT while being independent of either atomic or mechanical resonances. Such thermo-optically induced transparency will allow a versatile implementation of EIT-analogs in an integrated photonic platform, at almost arbitrary wavelength of interest, room temperature and in a practical, low cost, and scalable system.

O-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm 2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.

The authors present results on the performance of a hybrid external cavity photonic crystal laser-comprising semiconductor optical amplifier, and a 2D photonic crystal cavity fabricated in low-temperature amorphous silicon. The authors demonstrate that lithographic control over amorphous silicon photonic crystal cavity-resonant wavelengths is possible, and that single-mode lasing at optical telecommunications wavelengths is possible on an amorphous silicon platform.