In this paper, we show the experimental results of a thermally stable SiN external cavity (SiN EC) laser with high power output and the lowest SiN EC laser threshold to our knowledge. The device consists of a 250 μm sized reflective semiconductor optical amplifier butt-coupled to a passive chip based on a series of SiN Bragg gratings acting as narrow reflectors. A threshold of 12 mA has been achieved, with a typical side-mode suppression ratio of 45 dB and measured power output higher than 3 mW. Furthermore, we achieved a mode-hop free-lasing regime in the range of 15-62 mA and wavelength thermal stability up to 80°C. This solves the challenges related to cavity resonances' thermal shift and shows the possibility for this device to be integrated in dense wavelength-division multiplexing (WDM) and heat-intensive optical interconnects technologies.
In recent years, the monolithic integration of new materials such as SiN, Ge and LiNbO3 on silicon (Si) has become important to the Si photonics community due to the possibility of combining the advantages of both material systems. However, efficient coupling between the two different layers is challenging. In this work, we present a spot size converter based on a two-tier taper structure to couple the optical mode adiabatically between Si and SiN. The fabricated devices show a coupling loss as low as 0.058 dB ± 0.01 dB per transition at 1525 nm. The low coupling loss between the Si to SiN, and vice versa, reveals that this interlayer transition occurs adiabatically for short taper lengths (<200 µm). The high refractive index contrast between the Si and SiN is overcome by matching the optical impedance. The proposed two-tier taper structure provides a new platform for optoelectronic integration and a route towards 3D photonic integrated circuits.
A novel configuration of a Fourier domain mode locked (FDML) laser based on silicon photonics platform is presented in this work that exploits the narrowband reflection spectrum of a photonic crystal (PhC) cavity resonator. Configured as a linear Fabry-Perot laser, forward biasing of a p-n junction on the PhC cavity allowed for thermal tuning of the spectrum. The modulation frequency applied to the reflector equalled the inverse roundtrip time of the long cavity resulting in stable FDML operation over the swept wavelength range. An interferometric phase measurement measured the sweeping instantaneous frequency of the laser. The silicon photonics platform has potential for very compact implementation, and the electro-optic modulation method opens the possibility of modulation speeds far beyond those of mechanical filters.
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