Abstract-The objective of this paper is to provide an overview of emerging technologies for modular power converter architectures for electric vehicles. Nowadays, the most common electrical drive-train architecture exhibits one single inverter which is directly tied to the battery. As a consequence, only one high-voltage battery module can be applied and the dc-link voltage of the inverter and its apparent power rating is directly dependent on the available battery voltage. To overcome this restriction, modern power converter architectures with a higher degree of freedom have been proposed. These architectures exhibit modular dc-dc converters to allow different battery technologies to be linked to drive inverters operating independently from each other. To make this development feasible, new components and technologies are evolving which enhance the efficiency over mission cycles while ensuring further integration of the power-converter architectures.Wide-bandgap power semiconductors enable high switching frequencies and miniaturization of passive devices. Smart topology enhancements and control methods allow a significant loss reduction, in particular at light loads, resulting in a higher efficiency of the drive train over the entire driving cycle. Highly integrated bidirectional battery charger systems with intelligent charging strategies inhibit battery degradation and provide opportunities for grid stabilization. It is demonstrated how these technologies are realized and implemented to contribute to the development of future electric vehicles.
Die vorliegende Arbeit entstand während meiner Tätigkeit als Wissenschaftlicher Mitarbeiter von Januar 2012 bis November 2016 am Institut für Stromrichtertechnik und Elektrische Antriebe (ISEA) der Rheinisch-Westfälischen Technische Hochschule (RWTH) Aachen. Ich danke meinem Doktorvater Herr Professor De Doncker für die Möglichkeit der Promotion am ISEA, für die Betreuung und die großen Freiräume für das eigenständige wissenschaftliche Arbeiten. Frau Professorin Ponci danke ich für die freundliche Übernahme des Korreferats. Ganz herzlich bedanke ich mich bei meinen ehemaligen Kollegen, Studenten und Angestellten des ISEAs für das hervorragende Arbeitsklima. Es war mir immer eine sehr große Freude zum ISEA zu gehen und mich dort in die Arbeit zu stürzen. Bedanken möchte ich mich bei meinen Kollegen der Leistungselektronik für die unzähligen fachlichen Diskussionen und unterstützenden Ratschläge. Mein besonderer Dank geht an die Studenten, die mich in dieser Zeit am ISEA unterstützt haben, insbesondere danke ich Daniel Prümper, Niklas Fritz, Renè Jörg Spenke, Anna Isabel Ramones, Merlin Marek und an Sascha Rauchholz. Nicht zuletzt möchte ich mich auch bei meiner Familie bedanken, die akzeptiert hat, dass ich zum Studium und zur Promotion weit weg aus meiner Heimat gegangen bin.
After 10 years of advances in silicon RF integration, what used to be an art is becoming a "normal practice." Historically, RF-design was the art of s-parameters, shielding, impedance matching, and standing wave ratios. Modern silicon RFICs are designed using the same SPICE-like tools as in low-frequency analog ICs with the addition of important software for system-level simulation and mixer circuit noise analysis. New RF design practices away from the 50 ohm culture, novel chip ar chitectures, and powerful technological advances will drive radio integration toward the ultimate single-chip phone. The obstacles in this quest are high system requirements on noise figure, substrate cross talk, and parasitic coupling, not the silicon IC technology.
A novel solution for last generation power MOSFETs is proposed for the first time to reduce commutation losses and easy the voltage and current control during hard switching commutations. The proposed structure is easily applicable to any driver topology and it is devoted to the realization of an hardswitched PWM inverter leg based on two power mosfets. The bidirectional conduction capability of unipolar-channel-based power components has been always considered ideal to reduce the conduction losses in inverter-leg structure, particularly when the maximum mosfets conduction losses is less than the body-diode one. Theoretical analysis and experimental results are given to prove the feasibility of the proposed structure.
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