International audienceThe fabrication of Schottky diodes withstanding breakdown voltages up to 10 kV is demonstrated. A corresponding electric field of 7.7 MV/cm at the center of the diode is evaluated with the help of a two-dimensional finite elements software. These properties result from a net shallow acceptor concentration below 10(16) cm(-3) in the first micrometers of an epitaxial film with optimized crystalline quality and a special oxidizing treatment of its surface, allowing the true dielectric strength of bulk diamond to be revealed
SiC is currently an important topic in power devices. This new technology leads to lower power losses, faster switching, and higher working temperature. The design of SiC power devices requires the integration of edge termination techniques to obtain a high blocking voltage. The mesa structure approach is one wellestablished method. It could be used alone or in combination with a Junction Termination Extension (JTE). The mesa consists of a structure that removes material around the pn-junction. Due to the strong Si-C bonds, conventional chemical-wet etching solutions are inefficient on SiC, so plasma methods are required to etch SiC.The presented work is based on the use of an RIE reactor with an SF 6 /O 2 plasma. Its geometry structure and parameters were optimized. An etch rate of 0.35 µm/min was obtained without any trenching phenomenon. Trenches deeper than 10 µm deep were realized with a nickel etching mask that shows a high selectivity. AFM analysis revealed an etched surface as smooth as the initial one.
Investigations on Ni-Al alloys to form ohmic contacts on p-type 4H-SiC are presented in this paper. Several ratios of the Ni/Al contact were examined. Rapid thermal annealing was performed in Argon atmosphere at 400°C during 1 minute, followed by an annealing at 1000°C during 2 minutes. In order to extract the specific contact resistance, transmission line method (TLM) test-structures were fabricated. A specific contact resistance of 3×10 -5 Ω.cm 2 was obtained reproducibly on p-type layers, with a doping of NA = 1×10 19 cm -3 performed by Al 2+ ion implantation. The lowest specific contact resistance value measured was 8×10 -6 Ω.cm 2 .
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