Dependence of Channel Mobility on the Surface Step in Orientation in Planar 6H-SiC MOSFETs

Scharnholz, Sigo; Kamienski, E. Stein von; Gölz, A.; Leonhard, C.; Kurz, H.

doi:10.4028/www.scientific.net/msf.264-268.1001

Cited by 17 publications

(16 citation statements)

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“…In fact, it has been observed that the formation of step bunching alters the channel mobility in MOSFET devices 114,115 generating an anisotropy of the effective mobility 114,116,117 and an increase of the leakage current of the Schottky diodes. 118 This phenomenon can be observed after the surface etching 119,120 or the annealing after the ion implantation and after epitaxial growths.…”

Section: F Growth Rate and Defects Formation Or Annihilationmentioning

confidence: 99%

Mechanisms of growth and defect properties of epitaxial SiC

Via

Camarda

Magna

2014

Applied Physics Reviews

105

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Section: F Growth Rate and Defects Formation Or Annihilationmentioning

confidence: 99%

Mechanisms of growth and defect properties of epitaxial SiC

Via

Camarda

Magna

2014

Applied Physics Reviews

105

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“…Moreover, ion fluxes and ion energy can be controlled separately, thus increasing flexibility in optimizing etch responses. roughness of silicon carbide [7]- [9] to minimize the replication of substrate defects into the homoepitaxial SiC active device layers. Using an atomic force spectroscopy (AFM), the roughness of 4H-SiC reactive-ion etched in a SF or CHF plasmas was investigated from the perspective of before and after etching [8].…”

Section: Introductionmentioning

confidence: 99%

Relationships between etch rate and roughness of plasma etched surface

Kim

Lee

2002

IEEE Trans. Plasma Sci.

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Relationships between etch rate and surface roughness are examined as a function of process factors, including source power, bias power, pressure, and O 2 fraction. Experimental factor ranges are 600-900 W source power, 50-150-W bias power, 4-16-mtorr pressure, and 0%-80%-O 2 fraction. Atomic force microscopy was used to quantify surface roughness of silicon carbide etched in a C 2 F 6 inductively coupled plasma. The impact of ion energy was estimated by means of dc bias. The etch rate was inversely related to surface roughness as source power (plasma density) varied. The source power-induced dc bias was strongly correlated to surface roughness. For variations in bias power (ion bombardment energy), the etch rate was almost linearly correlated to both surface roughness and dc bias. For variations in pressure or O 2 fraction, the etch rate was related to surface roughness in a complex way.Index Terms-Atomic force microscopy (AFM), dc bias, etch rate, silicon carbide, surface roughness.

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“…Scharnholz et al [8] have investigated how different device orientations on the wafer affect the surface mobility. 6H-SiC (0001) wafers are usually cut to provide a 3.5 angle between the surface normal and the c-axis.…”

Section: Surface Mobilitymentioning

confidence: 99%

“…This angle results in small microscopic steps on the surface. Scharnholz et al [8] found that the surface mobility in 6H-SiC is very sensitive to how the current direction is orientated relative to these steps. The mobility was found to be as high as 145 cm 2 /V s parallel to the steps, which is the highest value reported for 6H-SiC.…”

Section: Surface Mobilitymentioning

confidence: 99%